of Transistors:1; On State Resistance Max:50mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Disspation Pd for 50mm sq PCB:4.2W; Pulse Current Idm:35.3A; Reverse Recovery Time trr Typ:16ns; Rise Time:3.8ns; SMD Marking:ZXMN 4A06; Termination Type:Surface Mount Device; Voltage Vds Typ:40V; Voltage Vgs Max:20V of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (15-Jan-2019); Alternate Case Style:TO-252; Application Code:GPSW; Current Id Max:10.9A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Fall Time tf:10.9ns; Full Power Rating Temperature:25°C; No. MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7.2A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:9.5W; Transistor Case Style:TO-252; No.
Semiconductors - Discretes
Diodes Inc. Zxmn4A06K
Specifications of Diodes Inc. Zxmn4A06K | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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