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Stmicroelectronics Stp140Nf55

About The MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-220; No

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Avalanche Single Pulse Energy Eas:1300mJ; Capacitance Ciss Typ:5300pF; Current Id Max:80A; On State resistance @ Vgs = 10V:8mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:320A; Termination Type:Through Hole; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

Semiconductors - Discretes

Stmicroelectronics Stp140Nf55

Semiconductors - Discretes

Specifications of Stmicroelectronics Stp140Nf55

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Stmicroelectronics Stp140Nf55
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MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-220; No.

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-220; No.

Stmicroelectronics Stp80Nf55-06 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:STP Series; Automotive Qualification Standard:-; MSL:MSL 2 - 1 year; SVHC:No SVHC (17-Dec-2015); Avalanche Single Pulse Energy Eas:1300mJ; Capacitance Ciss Typ:4400pF; Current Id Max:80A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:320A; Termination Type:Through Hole; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V.

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    • MOSFET, N, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.56ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:30W; Transistor Case Style:TO-220FP; No.

    MOSFET, N, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.56ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:30W; Transistor Case Style:TO-220FP; No.

    Stmicroelectronics Stp6Nk90Zfp of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Avalanche Single Pulse Energy Eas:300mJ; Capacitance Ciss Typ:1350pF; Current Iar:5.8A; Current Id Max:5.2A; Termination Type:Through Hole; Voltage Vds:900V; Voltage Vds Typ:900V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.8A; On State resistance @ Vgs = 10V:2ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:23.

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    • MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:70W; Transistor Case Style:TO-252; No.

    MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:70W; Transistor Case Style:TO-252; No.

    75V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.4A; On State resistance @ Vgs = 10V:1.6A; Termination Type:Surface Mount Device; Voltage Vds:500V; Voltage Vds Typ:500V; Voltage Vgs Max:3.

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    • MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:600V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:70W; Transistor Case Style:TO-252; No.

    MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:600V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:70W; Transistor Case Style:TO-252; No.

    Stmicroelectronics Std4Nk60Zt4 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:4A; On State resistance @ Vgs = 10V:2ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:16A; Termination Type:Surface Mount Device; Voltage Vds:600V; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.

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    • MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:16V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:30W; Transistor Case Style:TO-252; No.

    MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:16V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:30W; Transistor Case Style:TO-252; No.

    Stmicroelectronics Std17Nf03Lt4 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:17A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:68A; Termination Type:Surface Mount Device; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.2V; Voltage Vgs th Min:1V.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.

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    • MOSFET, N, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:600V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:25W; Transistor Case Style:TO-220FP; No.

    MOSFET, N, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:600V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:25W; Transistor Case Style:TO-220FP; No.

    Stmicroelectronics Stp4Nk60Zfp of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Avalanche Single Pulse Energy Eas:120mJ; Capacitance Ciss Typ:510pF; Current Iar:4A; Current Id Max:4A; On State resistance @ Vgs = 10V:2ohm; Pulse Current Idm:16A; Termination Type:Through Hole; Voltage Vds:600V; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.

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    • MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-220; No.

    MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-220; No.

    Stmicroelectronics Stp140Nf55 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Avalanche Single Pulse Energy Eas:1300mJ; Capacitance Ciss Typ:5300pF; Current Id Max:80A; On State resistance @ Vgs = 10V:8mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:320A; Termination Type:Through Hole; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V.

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    • MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:550V; On Resistance Rds(on):0.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:160W; Transistor Case Style:TO-220; No.

    MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:550V; On Resistance Rds(on):0.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:160W; Transistor Case Style:TO-220; No.

    Stmicroelectronics Stp12Nm50 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:STP Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Avalanche Single Pulse Energy Eas:400mJ; Capacitance Ciss Typ:1000pF; Current Iar:6A; Current Id Max:12A; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Pulse Current Idm:48A; Termination Type:Through Hole; Voltage Vds:550V; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V.

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    • MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-220; No.

    MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-220; No.

    Stmicroelectronics Stp140Nf55 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Avalanche Single Pulse Energy Eas:1300mJ; Capacitance Ciss Typ:5300pF; Current Id Max:80A; On State resistance @ Vgs = 10V:8mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:320A; Termination Type:Through Hole; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V.

  • Eletrônicos
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    • MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:550V; On Resistance Rds(on):0.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:160W; Transistor Case Style:TO-220; No.

    MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:550V; On Resistance Rds(on):0.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:160W; Transistor Case Style:TO-220; No.

    Stmicroelectronics Stp12Nm50 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:STP Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Avalanche Single Pulse Energy Eas:400mJ; Capacitance Ciss Typ:1000pF; Current Iar:6A; Current Id Max:12A; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Pulse Current Idm:48A; Termination Type:Through Hole; Voltage Vds:550V; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V.

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