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DIODES INC.

Diodes Inc. Dn350T05-7

About The BIPOLAR, TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:50MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:30hFE; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on):300mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:50MHz; Hfe Min:30; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Small Signal

BIPOLAR, TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:50MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:30hFE; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on):300mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:50MHz; Hfe Min:30; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Small Signal

Semiconductors - Discretes

Diodes Inc. Dn350T05-7

Semiconductors - Discretes

Specifications of Diodes Inc. Dn350T05-7

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Diodes Inc. Dn350T05-7
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Votes :- 54
BIPOLAR, TRANSISTOR, NPN, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:1W; DC Collector Current:200mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-89; No.

BIPOLAR, TRANSISTOR, NPN, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:1W; DC Collector Current:200mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-89; No.

Dxt3904-13 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on):200mV; Current Ic Continuous a Max:200mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:100; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.Diodes Inc.

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    • BIPOLAR, TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:150MHz; Power Dissipation Pd:600mW; DC Collector Current:1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.

    BIPOLAR, TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:150MHz; Power Dissipation Pd:600mW; DC Collector Current:1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.

    Dnbt8105-7 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on):250mV; Current Ic Continuous a Max:1A; Gain Bandwidth ft Typ:150MHz; Hfe Min:100; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.

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  • DIODES INC.
    • BIPOLAR, TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:50MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:30hFE; Transistor Case Style:SOT-23; No.

    BIPOLAR, TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:50MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:30hFE; Transistor Case Style:SOT-23; No.

    Diodes Inc. Dn350T05-7 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on):300mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:50MHz; Hfe Min:30; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Small Signal.

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    • RECTIFIER STD RECOVERY POWERDI 123; Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):1A; Diode Configuration:Single; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:-; Forward Surge Current Ifsm Max:25A; Operating Temperature Max:150°C; Diode Case Style:PowerDI 123; No.

    RECTIFIER STD RECOVERY POWERDI 123; Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):1A; Diode Configuration:Single; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:-; Forward Surge Current Ifsm Max:25A; Operating Temperature Max:150°C; Diode Case Style:PowerDI 123; No.

    Diodes Inc. Dflr1200-7 of Pins:2Pins; Product Range:DFLR1 Series; Automotive Qualification Standard:-; SVHC:Lead (15-Jan-2019); Current Ifsm:25A; Diode Type:Standard Recovery; Junction Temperature Tj Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device.

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  • DIODES INC.
    • BIPOLAR, TRANSISTOR, NPN, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:1W; DC Collector Current:200mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-89; No.
  • Eletrônicos
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  • DIODES INC.
    • BIPOLAR, TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:150MHz; Power Dissipation Pd:600mW; DC Collector Current:1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.

    BIPOLAR, TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:150MHz; Power Dissipation Pd:600mW; DC Collector Current:1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.

    Diodes Inc. Dnbt8105-7 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on):250mV; Current Ic Continuous a Max:1A; Gain Bandwidth ft Typ:150MHz; Hfe Min:100; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.

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  • DIODES INC.
    • BIPOLAR, TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:50MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:30hFE; Transistor Case Style:SOT-23; No.

    BIPOLAR, TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:50MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:30hFE; Transistor Case Style:SOT-23; No.

    Dn350T05-7 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on):300mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:50MHz; Hfe Min:30; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Small Signal.Diodes Inc.

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  • DIODES INC.
    • MOSFET, N CH, 20V, 0.54A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:540mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.55ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:350mW; Transistor Case Style:SOT-23; No.
  • Eletrônicos
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  • DIODES INC.
    • BIPOLAR, TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:50MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:30hFE; Transistor Case Style:SOT-23; No.

    BIPOLAR, TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:50MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:30hFE; Transistor Case Style:SOT-23; No.

    Dn350T05-7 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on):300mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:50MHz; Hfe Min:30; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Small Signal.Diodes Inc.

  • Eletrônicos
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  • DIODES INC.
    • MOSFET, N CH, 20V, 0.54A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:540mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.55ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:350mW; Transistor Case Style:SOT-23; No.
  • Eletrônicos
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  • DIODES INC.