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INFINEON

Infineon Ipd110N12N3Gatma1

About The of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C.

MOSFET, N-CH, 120V, 75A, TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:120V; On Resistance Rds(on):0.0092ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:136W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C

Semiconductors - Discretes

Infineon Ipd110N12N3Gatma1

Semiconductors - Discretes

Specifications of Infineon Ipd110N12N3Gatma1

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Infineon Ipd110N12N3Gatma1
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MOSFET, N-CH, 700V, 43.3A, TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:43.3A; Drain Source Voltage Vds:700V; On Resistance Rds(on):0.072oh; Available until stocks are exhausted Alternative available
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    • MOSFET, N-CH, 100V, 18A, 8TSDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:29W; Transistor Case Style:PG-TSDSON; No.

    MOSFET, N-CH, 100V, 18A, 8TSDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:29W; Transistor Case Style:PG-TSDSON; No.

    Infineon Bsz440N10Ns3Gatma1 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

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  • INFINEON
    • MOSFET, N-CH, 600V, 37.9A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:37.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:278W; Transistor Case Style:TO-220; No.

    MOSFET, N-CH, 600V, 37.9A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:37.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:278W; Transistor Case Style:TO-220; No.

    Infineon Ipp60R099C6Xksa1 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

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  • INFINEON
    • MOSFET, N-CH, 100V, 160A, TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:214W; Transistor Case Style:TO-263; No.

    MOSFET, N-CH, 100V, 160A, TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:214W; Transistor Case Style:TO-263; No.

    Infineon Ipb039N10N3Gatma1 of Pins:7Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, N-CH, 100V, 160A, TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:214W; Transistor Case Style:TO-263; No.

    MOSFET, N-CH, 100V, 160A, TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:214W; Transistor Case Style:TO-263; No.

    Infineon Ipb039N10N3Gatma1 of Pins:7Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C.

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  • Componentes e placas de circuitos
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  • INFINEON