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AMP - TE CONNECTIVITY

Amp - Te Connectivity 213862-1

About The CIRCULAR CONNECTOR, 16POS, RCPT, FLANGE; Product Range:CPC Series 1; Circular Connector Shell Style:Flange Mount Receptacle; No. of Contacts:16Contacts; Circular Contact Type:Crimp Pin - Contacts Not 20C2381

CIRCULAR CONNECTOR, 16POS, RCPT, FLANGE; Product Range:CPC Series 1; Circular Connector Shell Style:Flange Mount Receptacle; No. of Contacts:16Contacts; Circular Contact Type:Crimp Pin - Contacts Not 20C2381

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Amp - Te Connectivity 213862-1

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Specifications of Amp - Te Connectivity 213862-1

CategoryFerragens > Suprimentos elétricos > Conectores e terminais de cabos
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Amp - Te Connectivity 213862-1
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Rating :- 8.13 /10
Votes :- 55
MOSFET, N, 600V D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:83W; Transistor Case Style:TO-252; No.

MOSFET, N, 600V D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:83W; Transistor Case Style:TO-252; No.

Onsemi Fcd7N60Tm of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Alternate Case Style:TO-252; Current Id Max:7A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:21A; Termination Type:Surface Mount Device; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N, 650V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.95ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:54W; Transistor Case Style:TO-252; No.

    MOSFET, N, 650V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.95ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:54W; Transistor Case Style:TO-252; No.

    6A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:13.Onsemi Fcd5N60Tm of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Alternate Case Style:TO-252; Current Id Max:4.8A; Termination Type:Surface Mount Device; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N, 600V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:50W; Transistor Case Style:TO-252; No.

    MOSFET, N, 600V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:50W; Transistor Case Style:TO-252; No.

    Onsemi Fcd4N60Tm of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Alternate Case Style:TO-252; Current Id Max:3.2ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:11.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N, 600V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:50W; Transistor Case Style:TO-252; No.

    MOSFET, N, 600V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:50W; Transistor Case Style:TO-252; No.

    Onsemi Fcd4N60Tm of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Alternate Case Style:TO-252; Current Id Max:3.2ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:11.7A; Termination Type:Surface Mount Device; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N, 600V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:50W; Transistor Case Style:TO-252; No.

    MOSFET, N, 600V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:50W; Transistor Case Style:TO-252; No.

    2ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:11.9A; On State Resistance Max:1.Onsemi Fcd4N60Tm of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Alternate Case Style:TO-252; Current Id Max:3.7A; Termination Type:Surface Mount Device; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI