MOSFET, DUAL, N, SO-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.029ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No.
Onsemi Fds8949 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Avalanche Single Pulse Energy Eas:26mJ; Capacitance Ciss Typ:715pF; Continuous Drain Current Id, N Channel:6A; Current Id Max:6A; Drain Source Voltage Vds, N Channel:40V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.021ohm; On State Resistance Max:29mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pin Configuration:D1(5,6), D2(7,8), G1(4), S1(3), G2(2), S2(1); Pulse Current Idm:20A; Termination Type:Surface Mount Device; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V.