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VISHAY

Vishay Si7465Dp-T1-Ge3

About The 051ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V;.2A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0

MOSFET, P CHANNEL, -60V, 5A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.051ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V;

Semiconductors - Discretes

Vishay Si7465Dp-T1-Ge3

Semiconductors - Discretes

Specifications of Vishay Si7465Dp-T1-Ge3

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Vishay Si7465Dp-T1-Ge3
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Componentes e placas de circuitos

Rating :- 8.08 /10
Votes :- 52
Igt:150mA; Corriente It Promedio:156A; Corriente en Estado Conductor IT(rms):250A; Pico Corriente Transitoria No Rep Itsm 50Hz:5.4kA; Corriente de Retención Ih Máx.:150mA; Corriente de Disparo de Puerta Máx.

Igt:150mA; Corriente It Promedio:156A; Corriente en Estado Conductor IT(rms):250A; Pico Corriente Transitoria No Rep Itsm 50Hz:5.4kA; Corriente de Retención Ih Máx.:150mA; Corriente de Disparo de Puerta Máx.

:-40°C MÓDULO TIRISTOR, 160A, 1,6 KV,; Tipo de Módulo SCR:Conectado en Serie - SCRs; Pico de Tensión Repetitiva en Estado Bloqueado, Vdrm:1.6kV; Corriente de Disparo de Puerta Máx.:125°C; Rango de Producto:-; Sustancia Extremadamente Preocupante (SVHC):No SVHC (15-Jun-2015); Encapsulado del Tiristor:Módulo; Encapsulado del Tiristor:Module; Número de Pines:7Pines; Temperatura de Trabajo Mín.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • SEMIKRON
    • THERMAL GREASE, TUBE, 57G; Dispensing Method:Tube; Volume:-; Weight:57g; Product Range:-; SVHC:No SVHC (15-Jan-2019)
  • Ferragens
  • Consumíveis para construção
  • Lubrificantes
  • Cooling & Thermal Management
  • BOYD
    • SOCKET, TSOP, 48POS, SMD; No.

    SOCKET, TSOP, 48POS, SMD; No.

    Emulation Technology S-Tso-Sm-048-B of Contacts:48Contacts; Connector Type:IC Socket; Pitch Spacing:0.5mm; Product Range:-; Row Pitch:19.39mm; Contact Material:Copper Alloy; Contact Plating:Palladium Plated Contacts; SVHC:No SVHC (17-Dec-2015); Contact Termination:Surface Mount Vertical; Contact Termination Type:Surface Mount.

  • Eletrônicos
  • Connectors
  • EMULATION TECHNOLOGY
    • PCB, PAD/HOLE; Board Type:Matrix Board; Board Material:Epoxy Glass Composite; Hole Diameter:1.067mm; External Height:101.6mm; External Width:101.6mm; Board Thickness:1.57mm; SVHC:No SVHC (15-Jan-2019); Pitch Spacing:2.54mm
  • Eletrônicos
  • Componentes e placas de circuitos
  • Prototipação de circuitos
  • Tábuas para pão
  • Tools & Production Supplies
  • VECTOR ELECTRONICS
    • PCB, BARE, NO HOLES - PLAIN,; Board Type:No Clad Board; Board Material:Epoxy Glass Composite; Hole Diameter:-; External Height:304.8mm; External Width:304.8mm; Board Thickness:1.57mm; SVHC:No SVHC (15-Jan-2019)
  • Eletrônicos
  • Componentes e placas de circuitos
  • Prototipação de circuitos
  • Tábuas para pão
  • Tools & Production Supplies
  • VECTOR ELECTRONICS
    • MOSFET, P CHANNEL, -60V, 5A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.051ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V;
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, P CHANNEL, -40V, 18.6A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:1.9W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, P CHANNEL, -40V, 18.6A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:1.9W; Transistor Case Style:PowerPAK SO; No.

    Vishay Si7463Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, P CHANNEL, -60V, 5A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.051ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V;
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, P CHANNEL, -40V, 18.6A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:1.9W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, P CHANNEL, -40V, 18.6A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:1.9W; Transistor Case Style:PowerPAK SO; No.

    Vishay Si7463Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, P CHANNEL, -60V, 5A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.051ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V;
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY