MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:806mW; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Capacitance Ciss Typ:370pF; Current Id Max:2.4A; Junction Temperature Tj Max:150°C; N-channel Gate Charge:4.8nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:11.8A; Reverse Recovery Time trr Typ:6.7ns; Termination Type:Surface Mount Device; Turn Off Time:17.8ns; Turn On Time:2.2ns; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds N Channel:4.5V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1V; Voltage Vgs th Min:0.4V
Semiconductors - Discretes
Diodes Inc. Zxmn2B01F
Specifications of Diodes Inc. Zxmn2B01F | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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