Ixys Semiconductor Ixfh30N50P

Rating :- 9.85 /10

Votes :- 52

MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:680W; Transistor Case Style:ISOTOP; No.

22Â°C/W; N-channel Gate Charge:240nC; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +175Â°C; Reverse Recovery Time trr Max:200ns; Termination Type:Screw; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.Ixys Semiconductor Ixfn140N20P of Pins:4Pins; Operating Temperature Max:175Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:7500pF; Current Id Max:115A; Junction to Case Thermal Resistance A:0.

MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:1.04kW; Transistor Case Style:ISOTOP; No.

12Â°C/W; N-channel Gate Charge:240nC; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Reverse Recovery Time trr Max:200ns; Termination Type:Screw; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.

MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:830W; Transistor Case Style:TO-264; No.

Ixys Semiconductor Ixfk64N50P of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:8700pF; Current Id Max:64A; Junction to Case Thermal Resistance A:0.15Â°C/W; N-channel Gate Charge:150nC; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Reverse Recovery Time trr Max:200ns; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.

MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:830W; Transistor Case Style:TO-264; No.

Ixys Semiconductor Ixfk48N60P of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:8860pF; Current Id Max:48A; Junction to Case Thermal Resistance A:0.15Â°C/W; N-channel Gate Charge:150nC; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Reverse Recovery Time trr Max:200ns; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.