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IXYS SEMICONDUCTOR

Ixys Semiconductor Ixfk48N60P

About The 15°C/W; N-channel Gate Charge:150nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Reverse Recovery Time trr Max:200ns; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:830W; Transistor Case Style:TO-264; No

MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:830W; Transistor Case Style:TO-264; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:8860pF; Current Id Max:48A; Junction to Case Thermal Resistance A:0.15°C/W; N-channel Gate Charge:150nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Reverse Recovery Time trr Max:200ns; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

Semiconductors - Discretes

Ixys Semiconductor Ixfk48N60P

Semiconductors - Discretes

Specifications of Ixys Semiconductor Ixfk48N60P

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Ixys Semiconductor Ixfk48N60P
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Rating :- 9.95 /10
Votes :- 53
MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:5V; Power Dissipation Pd:800W; Transistor Case Style:TO-264; No.

MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:5V; Power Dissipation Pd:800W; Transistor Case Style:TO-264; No.

18°C/W; N-channel Gate Charge:240nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Reverse Recovery Time trr Max:100ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.Ixys Semiconductor Ixtk200N10P of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:7600pF; Current Id Max:200A; Junction to Case Thermal Resistance A:0.

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  • IXYS SEMICONDUCTOR
    • MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:5V; Power Dissipation Pd:800W; Transistor Case Style:TO-264; No.

    MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:5V; Power Dissipation Pd:800W; Transistor Case Style:TO-264; No.

    18°C/W; N-channel Gate Charge:240nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Reverse Recovery Time trr Max:180ns; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.

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  • IXYS SEMICONDUCTOR
    • MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:5V; Power Dissipation Pd:680W; Transistor Case Style:ISOTOP; No.

    MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:5V; Power Dissipation Pd:680W; Transistor Case Style:ISOTOP; No.

    Ixys Semiconductor Ixfn200N10P of Pins:4Pins; Operating Temperature Max:175°C; Product Range:Polar(TM) HiPerFET; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:7600pF; Current Id Max:200A; Junction to Case Thermal Resistance A:0.22°C/W; N-channel Gate Charge:235nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Reverse Recovery Time trr Max:150ns; Termination Type:Screw; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.

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  • IXYS SEMICONDUCTOR
    • MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:680W; Transistor Case Style:ISOTOP; No.

    MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:680W; Transistor Case Style:ISOTOP; No.

    Ixys Semiconductor Ixfn180N15P of Pins:4Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:7000pF; Current Id Max:150A; Junction to Case Thermal Resistance A:0.22°C/W; N-channel Gate Charge:240nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Reverse Recovery Time trr Max:200ns; Termination Type:Screw; Voltage Vds Typ:150V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.

  • Eletrônicos
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  • IXYS SEMICONDUCTOR
    • MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:680W; Transistor Case Style:ISOTOP; No.

    MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:680W; Transistor Case Style:ISOTOP; No.

    Ixys Semiconductor Ixfn140N20P of Pins:4Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:7500pF; Current Id Max:115A; Junction to Case Thermal Resistance A:0.

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  • IXYS SEMICONDUCTOR
    • MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:1.04kW; Transistor Case Style:ISOTOP; No.

    MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.049ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:1.04kW; Transistor Case Style:ISOTOP; No.

    Ixys Semiconductor Ixfn100N50P of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:20000pF; Current Id Max:90A; Junction to Case Thermal Resistance A:0.12°C/W; N-channel Gate Charge:240nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Reverse Recovery Time trr Max:200ns; Termination Type:Screw; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.

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  • IXYS SEMICONDUCTOR
    • MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:830W; Transistor Case Style:TO-264; No.

    MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:830W; Transistor Case Style:TO-264; No.

    15°C/W; N-channel Gate Charge:150nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Reverse Recovery Time trr Max:200ns; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.Ixys Semiconductor Ixfk64N50P of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:8700pF; Current Id Max:64A; Junction to Case Thermal Resistance A:0.

  • Eletrônicos
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  • IXYS SEMICONDUCTOR
    • MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:830W; Transistor Case Style:TO-264; No.

    MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:830W; Transistor Case Style:TO-264; No.

    Ixys Semiconductor Ixfk48N60P of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:8860pF; Current Id Max:48A; Junction to Case Thermal Resistance A:0.

  • Eletrônicos
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  • IXYS SEMICONDUCTOR
    • MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:830W; Transistor Case Style:TO-264; No.

    MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:830W; Transistor Case Style:TO-264; No.

    Ixys Semiconductor Ixfk64N50P of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:8700pF; Current Id Max:64A; Junction to Case Thermal Resistance A:0.15°C/W; N-channel Gate Charge:150nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Reverse Recovery Time trr Max:200ns; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • IXYS SEMICONDUCTOR
    • MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:830W; Transistor Case Style:TO-264; No.

    MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:830W; Transistor Case Style:TO-264; No.

    15°C/W; N-channel Gate Charge:150nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Reverse Recovery Time trr Max:200ns; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.Ixys Semiconductor Ixfk48N60P of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:8860pF; Current Id Max:48A; Junction to Case Thermal Resistance A:0.

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  • IXYS SEMICONDUCTOR