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IXYS SEMICONDUCTOR

Ixys Semiconductor Ixfn200N10P

About The MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.22°C/W; N-channel Gate Charge:235nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Reverse Recovery Time trr Max:150ns; Termination Type:Screw; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:5V; Power Dissipation Pd:680W; Transistor Case Style:ISOTOP; No. of Pins:4Pins; Operating Temperature Max:175°C; Product Range:Polar(TM) HiPerFET; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:7600pF; Current Id Max:200A; Junction to Case Thermal Resistance A:0.22°C/W; N-channel Gate Charge:235nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Reverse Recovery Time trr Max:150ns; Termination Type:Screw; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Semiconductors - Discretes

Ixys Semiconductor Ixfn200N10P

Semiconductors - Discretes

Specifications of Ixys Semiconductor Ixfn200N10P

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Ixys Semiconductor Ixfn200N10P
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ANTENNA, SMB, IP68, SEALED; Antenna Type:GSM; Frequency Min:2.4GHz; Frequency Max:2.5GHz; Antenna Mounting:Panel; Gain:2dBi; VSWR:2; Input Power:-; Input Impedance:50ohm; Antenna Polarisation:Vertical; Product Range:-; SVHC:No SVHC (27-Jun-2018); Antenna Applications:Bluetooth, GSM, Instrumentation & Telemetry Equipment, WLAN, Zigbee; Gain Ranges:2 dBi; Impedance:50ohm
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    • MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:100W; Transistor Case Style:TO-220; No.

    MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:100W; Transistor Case Style:TO-220; No.

    6A; Junction to Case Thermal Resistance A:1.Ixys Semiconductor Ixtp4N80P of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:750pF; Current Id Max:3.25°C/W; N-channel Gate Charge:15nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Reverse Recovery Time trr Max:600ns; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.

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  • IXYS SEMICONDUCTOR
    • MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):4.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220; No.

    MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):4.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220; No.

    2kV; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.Ixys Semiconductor Ixtp3N120 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:1050pF; Current Id Max:3A; Junction to Case Thermal Resistance A:0.

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  • IXYS SEMICONDUCTOR
    • MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:5V; Power Dissipation Pd:800W; Transistor Case Style:TO-264; No.

    MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:5V; Power Dissipation Pd:800W; Transistor Case Style:TO-264; No.

    18°C/W; N-channel Gate Charge:240nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Reverse Recovery Time trr Max:100ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.Ixys Semiconductor Ixtk200N10P of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:7600pF; Current Id Max:200A; Junction to Case Thermal Resistance A:0.

  • Eletrônicos
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  • IXYS SEMICONDUCTOR
    • MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:5V; Power Dissipation Pd:800W; Transistor Case Style:TO-264; No.

    MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:5V; Power Dissipation Pd:800W; Transistor Case Style:TO-264; No.

    18°C/W; N-channel Gate Charge:240nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Reverse Recovery Time trr Max:100ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.Ixys Semiconductor Ixtk200N10P of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:7600pF; Current Id Max:200A; Junction to Case Thermal Resistance A:0.

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  • IXYS SEMICONDUCTOR