MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:100W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:750pF; Current Id Max:3.6A; Junction to Case Thermal Resistance A:1.25°C/W; N-channel Gate Charge:15nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Reverse Recovery Time trr Max:600ns; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Semiconductors - Discretes
Ixys Semiconductor Ixtp4N80P
Specifications of Ixys Semiconductor Ixtp4N80P | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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