RF BIP TRANSISTORS; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4.5V; Transition Frequency ft:42GHz; Power Dissipation Pd:500mW; DC Collector Current:150mA; DC Current Gain hFE:100hFE; RF Transistor Case:SOT-343; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Semiconductors - Discretes
Infineon Bfp650H6327Xtsa1
Specifications of Infineon Bfp650H6327Xtsa1 | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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