RF BIP TRANSISTORS; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:250mW; DC Collector Current:65mA; DC Current Gain hFE:100hFE; RF Transistor Case:SOT-143; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Semiconductors - Discretes
Infineon Bfp196E6327Htsa1
Specifications of Infineon Bfp196E6327Htsa1 | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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