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Onsemi 2N7002Kw

About The 31A, SOT-323-3; Transistor Polarity:N Channel; Continuous Drain Current Id:310mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

MOSFET, N CH, 60V, 0.31A, SOT-323-3; Transistor Polarity:N Channel; Continuous Drain Current Id:310mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:300mW; Transistor Case Style:SOT-323; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

Semiconductors - Discretes

Onsemi 2N7002Kw

More from ONSEMI? MOSFET, N CH, 60V, 0.31A, SOT-323-3; Transistor Polarity:N Channel; Continuous Drain Current Id:310mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:300mW; Transistor Case Style:SOT-323; No.
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Semiconductors - Discretes

Specifications of Onsemi 2N7002Kw

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Onsemi 2N7002Kw
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MOSFET, N CH, 150V, 21A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:95W; Transistor Case Style:TO-252AA; No.
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    • MOSFET, N CH, 50V, 0.21A, SOT-323-3; Transistor Polarity:N Channel; Continuous Drain Current Id:210mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):1.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.3V; Power Dissipation Pd:340mW; Transistor Case Style:SOT-323; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N CH, 150V, 21A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:95W; Transistor Case Style:TO-252AA; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N CH, 50V, 0.21A, SOT-323-3; Transistor Polarity:N Channel; Continuous Drain Current Id:210mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):1.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.3V; Power Dissipation Pd:340mW; Transistor Case Style:SOT-323; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N CH, 50V, 0.21A, SOT-323-3; Transistor Polarity:N Channel; Continuous Drain Current Id:210mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):1.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.3V; Power Dissipation Pd:340mW; Transistor Case Style:SOT-323; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI