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ONSEMI

Onsemi Bss138W

About The of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).3V; Power Dissipation Pd:340mW; Transistor Case Style:SOT-323; No

MOSFET, N CH, 50V, 0.21A, SOT-323-3; Transistor Polarity:N Channel; Continuous Drain Current Id:210mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):1.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.3V; Power Dissipation Pd:340mW; Transistor Case Style:SOT-323; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

Semiconductors - Discretes

Onsemi Bss138W

More from ONSEMI? MOSFET, N CH, 50V, 0.21A, SOT-323-3; Transistor Polarity:N Channel; Continuous Drain Current Id:210mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):1.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.3V; Power Dissipation Pd:340mW; Transistor Case Style:SOT-323; No.
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Semiconductors - Discretes

Specifications of Onsemi Bss138W

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Onsemi Bss138W
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Rating :- 8.04 /10
Votes :- 52
MOSFET, N & P CH, 130V, 6.4A, SOIC-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No.
  • Eletrônicos
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  • ONSEMI
    • MOSFET, N CH, 60V, 18A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0043ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:245W; Transistor Case Style:TO-220AB; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N CH, 30V, 94A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:80W; Transistor Case Style:TO-252AA; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N CH, 30V, 94A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:80W; Transistor Case Style:TO-252AA; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N CH, 150V, 21A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:95W; Transistor Case Style:TO-252AA; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N CH, 50V, 0.21A, SOT-323-3; Transistor Polarity:N Channel; Continuous Drain Current Id:210mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):1.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.3V; Power Dissipation Pd:340mW; Transistor Case Style:SOT-323; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N CH, 150V, 21A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:95W; Transistor Case Style:TO-252AA; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N CH, 50V, 0.21A, SOT-323-3; Transistor Polarity:N Channel; Continuous Drain Current Id:210mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):1.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.3V; Power Dissipation Pd:340mW; Transistor Case Style:SOT-323; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N CH, 150V, 21A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:95W; Transistor Case Style:TO-252AA; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N CH, 50V, 0.21A, SOT-323-3; Transistor Polarity:N Channel; Continuous Drain Current Id:210mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):1.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.3V; Power Dissipation Pd:340mW; Transistor Case Style:SOT-323; No.
  • Eletrônicos
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  • ONSEMI