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ONSEMI

Onsemi Mb10S

About The of Pins:4Pins; Operating Temperature Max:150°C; Product Range:MB10S Series; SVHC:Lead (27-Jun-2018).BRIDGE RECT, SINGLE, 0

BRIDGE RECT, SINGLE, 0.8A, 1KV, SOIC; No. of Phases:Single Phase; Repetitive Reverse Voltage Vrrm Max:1kV; Forward Current If(AV):800mA; Bridge Rectifier Case Style:SOIC; Forward Voltage VF Max:1V; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:MB10S Series; SVHC:Lead (27-Jun-2018)

Semiconductors - Discretes

Onsemi Mb10S

Semiconductors - Discretes

Specifications of Onsemi Mb10S

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Onsemi Mb10S
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Rating :- 8.07 /10
Votes :- 54
RECTIFIER, SCHOTTKY, 2A, 80V, DO-214AA; Repetitive Reverse Voltage Vrrm Max:80V; Forward Current If(AV):2A; Diode Configuration:Single; Diode Case Style:DO-214AA; No.

RECTIFIER, SCHOTTKY, 2A, 80V, DO-214AA; Repetitive Reverse Voltage Vrrm Max:80V; Forward Current If(AV):2A; Diode Configuration:Single; Diode Case Style:DO-214AA; No.

Onsemi Ss28 of Pins:2Pins; Forward Voltage VF Max:850mV; Forward Surge Current Ifsm Max:50A; Operating Temperature Max:125°C; Product Range:SS28 Series; Automotive Qualification Standard:-; SVHC:Lead (27-Jun-2018); Diode Type:Schottky; Semiconductor Technology:Si.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • ONSEMI
    • RECTIFIER, SCHOTTKY, 2A, 80V, DO-214AA; Repetitive Reverse Voltage Vrrm Max:80V; Forward Current If(AV):2A; Diode Configuration:Single; Diode Case Style:DO-214AA; No.

    RECTIFIER, SCHOTTKY, 2A, 80V, DO-214AA; Repetitive Reverse Voltage Vrrm Max:80V; Forward Current If(AV):2A; Diode Configuration:Single; Diode Case Style:DO-214AA; No.

    Onsemi Ss28 of Pins:2Pins; Forward Voltage VF Max:850mV; Forward Surge Current Ifsm Max:50A; Operating Temperature Max:125°C; Product Range:SS28 Series; Automotive Qualification Standard:-; SVHC:Lead (27-Jun-2018); Diode Type:Schottky; Semiconductor Technology:Si.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • RECTIFIER, STANDARD, 2A, 400V, DO-214AA; Repetitive Reverse Voltage Vrrm Max:400V; Forward Current If(AV):2A; Diode Configuration:Single; Forward Voltage VF Max:1.15V; Reverse Recovery Time trr Max:2µs; Forward Surge Current Ifsm Max:50A; Operating Temperature Max:150°C; Diode Case Style:DO-214AA; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • of Phases:Single Phase; Repetitive Reverse Voltage Vrrm Max:1kV; Forward Current If(AV):800mA; Bridge Rectifier Case Style:SOIC; Forward Voltage VF Max:1V; No.

    of Phases:Single Phase; Repetitive Reverse Voltage Vrrm Max:1kV; Forward Current If(AV):800mA; Bridge Rectifier Case Style:SOIC; Forward Voltage VF Max:1V; No.

    8A, 1KV, SOIC; No.of Pins:4Pins; Operating Temperature Max:150°C; Product Range:MB10S Series; SVHC:Lead (27-Jun-2018) BRIDGE RECT, SINGLE, 0.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • ONSEMI
    • IGBT, SINGLE, 360V, 46A, TO-263AB-3; DC Collector Current:46A; Collector Emitter Saturation Voltage Vce(on):1.17V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:360V; Transistor Case Style:TO-263AB; No.

    IGBT, SINGLE, 360V, 46A, TO-263AB-3; DC Collector Current:46A; Collector Emitter Saturation Voltage Vce(on):1.17V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:360V; Transistor Case Style:TO-263AB; No.

    Onsemi Isl9V5036S3St of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • RECTIFIER, STANDARD, 2A, 400V, DO-214AA; Repetitive Reverse Voltage Vrrm Max:400V; Forward Current If(AV):2A; Diode Configuration:Single; Forward Voltage VF Max:1.15V; Reverse Recovery Time trr Max:2µs; Forward Surge Current Ifsm Max:50A; Operating Temperature Max:150°C; Diode Case Style:DO-214AA; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • of Phases:Single Phase; Repetitive Reverse Voltage Vrrm Max:1kV; Forward Current If(AV):800mA; Bridge Rectifier Case Style:SOIC; Forward Voltage VF Max:1V; No.

    of Phases:Single Phase; Repetitive Reverse Voltage Vrrm Max:1kV; Forward Current If(AV):800mA; Bridge Rectifier Case Style:SOIC; Forward Voltage VF Max:1V; No.

    8A, 1KV, SOIC; No.of Pins:4Pins; Operating Temperature Max:150°C; Product Range:MB10S Series; SVHC:Lead (27-Jun-2018) BRIDGE RECT, SINGLE, 0.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • IGBT, SINGLE, 360V, 46A, TO-263AB-3; DC Collector Current:46A; Collector Emitter Saturation Voltage Vce(on):1.17V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:360V; Transistor Case Style:TO-263AB; No.

    IGBT, SINGLE, 360V, 46A, TO-263AB-3; DC Collector Current:46A; Collector Emitter Saturation Voltage Vce(on):1.17V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:360V; Transistor Case Style:TO-263AB; No.

    Onsemi Isl9V5036S3St of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • of Phases:Single Phase; Repetitive Reverse Voltage Vrrm Max:1kV; Forward Current If(AV):800mA; Bridge Rectifier Case Style:SOIC; Forward Voltage VF Max:1V; No.

    of Phases:Single Phase; Repetitive Reverse Voltage Vrrm Max:1kV; Forward Current If(AV):800mA; Bridge Rectifier Case Style:SOIC; Forward Voltage VF Max:1V; No.

    of Pins:4Pins; Operating Temperature Max:150°C; Product Range:MB10S Series; SVHC:Lead (27-Jun-2018) BRIDGE RECT, SINGLE, 0. Onsemi Mb10S.8A, 1KV, SOIC; No.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • IGBT, SINGLE, 360V, 46A, TO-263AB-3; DC Collector Current:46A; Collector Emitter Saturation Voltage Vce(on):1.17V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:360V; Transistor Case Style:TO-263AB; No.

    IGBT, SINGLE, 360V, 46A, TO-263AB-3; DC Collector Current:46A; Collector Emitter Saturation Voltage Vce(on):1.17V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:360V; Transistor Case Style:TO-263AB; No.

    Onsemi Isl9V5036S3St of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI