MOSFET, N-CH, 500V, 10.5A, TO220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:114W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:E Series; Automotive Qualification Standard:-; MSL:-
Semiconductors - Discretes
Vishay Sihp12N50E-Ge3
Specifications of Vishay Sihp12N50E-Ge3 | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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