Onsemi Mjd32Ct4G

Rating :- 8.12 /10

Votes :- 53

TRANSISTOR, NPN, SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:150mW; DC Collector Current:200mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-323; No.

Onsemi Mmbt3904Wt1G of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):200mV; Complementary Device:MMBT3906WT1G; Continuous Collector Current Ic Max:200mA; Current Ic Continuous a Max:50mA; Current Ic hFE:100mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:30; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Pin Configuration:B(1), C(3), E(2); Power Dissipation Ptot Max:150mW; Termination Type:Surface Mount Device; Voltage Vcbo:60V.

TRANSISTOR, NPN, SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:200mW; DC Collector Current:200mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-416; No.

Onsemi Mmbt3904Tt1G of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):200mV; Current Ic Continuous a Max:50mA; Current Ic hFE:300mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:30; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device.

TRANSISTOR, BJT, PNP, -60V, -0.6A,SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:200MHz; Power Dissipation Pd:225mW; DC Collector Current:-600mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-23; No.

Onsemi Mmbt2907Alt1G of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):400mV; Gain Bandwidth ft Typ:200MHz; Hfe Min:50; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device.

TRANSISTOR, NPN, 40V, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:225mW; DC Collector Current:600mA; DC Current Gain hFE:300hFE; Transistor Case Style:SOT-23; No.

Onsemi Mmbt2222Alt1G of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Current Ic hFE:300mA; DC Current Gain Hfe Min:100; Gain Bandwidth ft Typ:300MHz; Hfe Min:100; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Peak Current Icm:1.1A; Termination Type:Surface Mount Device.

DIODE, SIGNAL, 100V, SOT-23; Diode Configuration:Dual Series; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):200mA; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:500mA; Operating Temperature Max:150Â°C; Diode Case Style:SOT-23; No.

Onsemi Mmbd7000Lt1G of Pins:3Pins; Product Range:MMBD7 Series; Automotive Qualification Standard:AEC-Q101; SVHC:No SVHC (27-Jun-2018); Junction Temperature Tj Max:150Â°C; Reverse Recovery Time trr Typ:4ns; Termination Type:Surface Mount Device.

DIODE, SIGNAL, 70V, SOT-23; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:70V; Forward Current If(AV):200mA; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:500mA; Operating Temperature Max:150Â°C; Diode Case Style:SOT-23; No.

Onsemi Mmbd6100Lt1G of Pins:3Pins; Product Range:MMBD6 Series; Automotive Qualification Standard:AEC-Q101; SVHC:No SVHC (27-Jun-2018); Junction Temperature Tj Max:150Â°C; Reverse Recovery Time trr Typ:4ns; Termination Type:Surface Mount Device.

TRANSISTOR, PNP, D-PAK; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:3MHz; Power Dissipation Pd:15W; DC Collector Current:-3A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

Onsemi Mjd32Ct4G of Pins:4Pins; Operating Temperature Max:150Â°C; Product Range:MJxxxx Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):1.2V; Complementary Device:MJD31CT4G; Continuous Collector Current Ic Max:3A; Current Ic Continuous a Max:3A; Current Ic hFE:3A; Gain Bandwidth ft Typ:3MHz; Hfe Min:10; Operating Temperature Min:-65Â°C; Operating Temperature Range:-65Â°C to +150Â°C; Peak Current Icm:5A; Termination Type:Surface Mount Device; Voltage Vcbo:100V.

THYRISTOR, 0.6A, 800V, SOT-223; Peak Repetitive Off-State Voltage, Vdrm:600V; Gate Trigger Current Max, Igt:200ÂµA; Current It av:800mA; On State RMS Current IT(rms):800mA; Thyristor Case Style:SOT-223; No.

Littelfuse Mcr08Mt1G of Pins:4Pins; Peak Non Rep Surge Current Itsm 50Hz:8A; Holding Current Max Ih:5mA; Gate Trigger Voltage Max Vgt:800mV; Operating Temperature Max:110Â°C; Product Range:-; MSL:MSL 3 - 168 hours; Current Itsm:8A; Operating Temperature Min:-40Â°C; Operating Temperature Range:-40Â°C to +110Â°C; Repetitive Reverse Voltage Vrrm Max:600V; Termination Type:Surface Mount Device; Thyristor Case:SOT-223; Thyristor Type:Thyristor.

LITTELFUSE

TRANSISTOR, PNP, D-PAK; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:3MHz; Power Dissipation Pd:15W; DC Collector Current:-3A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

THYRISTOR, 0.6A, 800V, SOT-223; Peak Repetitive Off-State Voltage, Vdrm:600V; Gate Trigger Current Max, Igt:200ÂµA; Current It av:800mA; On State RMS Current IT(rms):800mA; Thyristor Case Style:SOT-223; No.