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Nexperia Pmn30Xpx

About The MOSFET, P-CH, -20V, -5.5V; Threshold Voltage Vgs:-680mV; Power Dissipation Pd:550mW; Transistor Case Style:SOT-457; No

of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018) MOSFET, P-CH, -20V, -5.2A, SOT-457-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-680mV; Power Dissipation Pd:550mW; Transistor Case Style:SOT-457; No.

Semiconductors - Discretes

Nexperia Pmn30Xpx

Semiconductors - Discretes

Specifications of Nexperia Pmn30Xpx

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Nexperia Pmn30Xpx
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TRANSISTOR, AEC-Q101, BIPOL, NPN, 60V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:160MHz; Power Dissipation Pd:600mW; DC Collector Current:3A; DC Current Gain hFE:75hFE; Transistor Case Style:SOT-1061; No.

TRANSISTOR, AEC-Q101, BIPOL, NPN, 60V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:160MHz; Power Dissipation Pd:600mW; DC Collector Current:3A; DC Current Gain hFE:75hFE; Transistor Case Style:SOT-1061; No.

Nexperia Pbss4360Pasx of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • NEXPERIA
    • TRANSISTOR, AEC-Q101, BIPOL, NPN, 60V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:160MHz; Power Dissipation Pd:600mW; DC Collector Current:3A; DC Current Gain hFE:75hFE; Transistor Case Style:SOT-1061; No.

    TRANSISTOR, AEC-Q101, BIPOL, NPN, 60V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:160MHz; Power Dissipation Pd:600mW; DC Collector Current:3A; DC Current Gain hFE:75hFE; Transistor Case Style:SOT-1061; No.

    Nexperia Pbss4360Pasx of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

  • Eletrônicos
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  • Semicondutores
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  • NEXPERIA
    • BRT TRANSISTOR, AEC-Q101, 50V, 4.7K/10K; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:0.47(Ratio); RF Transistor Case:SOT-1215; No.
  • Eletrônicos
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  • NEXPERIA
    • BRT TRANSISTOR, AEC-Q101, 50V, 4.7K/47K; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:0.1(Ratio); RF Transistor Case:SOT-1215; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • BRT TRANSISTOR, AEC-Q101, 50V, 4.7K/10K; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:0.47(Ratio); RF Transistor Case:SOT-1215; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, P-CH, -20V, -3.7A, SOT-457-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-650mV; Power Dissipation Pd:530mW; Transistor Case Style:SOT-457; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, P-CH, -20V, -5.2A, SOT-457-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-680mV; Power Dissipation Pd:550mW; Transistor Case Style:SOT-457; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, P-CH, -20V, -3.7A, SOT-457-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-650mV; Power Dissipation Pd:530mW; Transistor Case Style:SOT-457; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, P-CH, -20V, -5.2A, SOT-457-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-680mV; Power Dissipation Pd:550mW; Transistor Case Style:SOT-457; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, P-CH, -20V, -3.7A, SOT-457-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-650mV; Power Dissipation Pd:530mW; Transistor Case Style:SOT-457; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA