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INFINEON

Infineon Ipt012N08N5Atma1

About The of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).001ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:375W; Transistor Case Style:PG-HSOF; No

MOSFET, N-CH, 80V, 300A, PG-HSOF-8; Transistor Polarity:N Channel; Continuous Drain Current Id:300A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.001ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:375W; Transistor Case Style:PG-HSOF; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

Semiconductors - Discretes

Infineon Ipt012N08N5Atma1

Semiconductors - Discretes

Specifications of Infineon Ipt012N08N5Atma1

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Infineon Ipt012N08N5Atma1
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Votes :- 55
TRANSISTOR, RF, AEC-Q101, NPN, TSFP-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:9V; Transition Frequency ft:14GHz; Power Dissipation Pd:210mW; DC Collector Current:35mA; DC Current Gain hFE:120hFE; RF Transistor Case:TSFP; No.

TRANSISTOR, RF, AEC-Q101, NPN, TSFP-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:9V; Transition Frequency ft:14GHz; Power Dissipation Pd:210mW; DC Collector Current:35mA; DC Current Gain hFE:120hFE; RF Transistor Case:TSFP; No.

Infineon Bfr360Fh6765Xtsa1 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

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  • INFINEON
    • of Pins:2 Pin; Product Range:Rapid 1 Series; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); No.

    of Pins:2 Pin; Product Range:Rapid 1 Series; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); No.

    Infineon Idp30E65D1Xksa1.7V; Reverse Recovery Time trr Max:64ns; Forward Surge Current Ifsm Max:180A; Operating Temperature Max:175°C; Diode Case Style:TO-220; No.7V, TO-220; Repetitive Reverse Voltage Vrrm Max:650V; Forward Current If(AV):60A; Diode Configuration:Single; Forward Voltage VF Max:1.of Pins:2Pins RECTIFIER, SINGLE, 60A, 1.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • INFINEON
    • MOSFET, N-CH, 80V, 300A, PG-HSOF-8; Transistor Polarity:N Channel; Continuous Drain Current Id:300A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.001ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:375W; Transistor Case Style:PG-HSOF; No.

    MOSFET, N-CH, 80V, 300A, PG-HSOF-8; Transistor Polarity:N Channel; Continuous Drain Current Id:300A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.001ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:375W; Transistor Case Style:PG-HSOF; No.

    Infineon Ipt012N08N5Atma1 of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

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  • INFINEON
    • SILICON CARBIDE SCHOTTKY DIODE, 1.2KV; Product Range:thinQ Series; Diode Configuration:Common Cathode; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:110A; Total Capacitive Charge Qc:202nC; Diode Case Style:TO-247; No.

    SILICON CARBIDE SCHOTTKY DIODE, 1.2KV; Product Range:thinQ Series; Diode Configuration:Common Cathode; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:110A; Total Capacitive Charge Qc:202nC; Diode Case Style:TO-247; No.

    Infineon Idw40G120C5Bfksa1 of Pins:3 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Forward Current If(AV):110A; Forward Surge Current Ifsm Max:145A; Forward Voltage VF Max:1.65V; Operating Temperature Max:175°C; Semiconductor Technology:SiC.

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  • INFINEON
    • MOSFET, N-CH, 40V, 195A, TO-263AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):970µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.9V; Power Dissipation Pd:375W; Transistor Case Style:TO-263AB; No.

    MOSFET, N-CH, 40V, 195A, TO-263AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):970µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.9V; Power Dissipation Pd:375W; Transistor Case Style:TO-263AB; No.

    Infineon Irfs7430Trlpbf of Pins:3Pins; Operating Temperature Max:175°C; Product Range:StrongIRFET HEXFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

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  • INFINEON
    • MOSFET, N-CH, 60V, 50A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:143W; Transistor Case Style:TO-252AA; No.

    MOSFET, N-CH, 60V, 50A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:143W; Transistor Case Style:TO-252AA; No.

    Infineon Irlr3636Trpbf of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HEXFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • INFINEON
    • MOSFET, N-CH, 60V, 50A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:143W; Transistor Case Style:TO-252AA; No.

    MOSFET, N-CH, 60V, 50A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:143W; Transistor Case Style:TO-252AA; No.

    Infineon Irlr3636Trpbf of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HEXFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, N-CH, 80V, 300A, PG-HSOF-8; Transistor Polarity:N Channel; Continuous Drain Current Id:300A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.001ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:375W; Transistor Case Style:PG-HSOF; No.

    MOSFET, N-CH, 80V, 300A, PG-HSOF-8; Transistor Polarity:N Channel; Continuous Drain Current Id:300A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.001ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:375W; Transistor Case Style:PG-HSOF; No.

    Infineon Ipt012N08N5Atma1 of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, N-CH, 60V, 50A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:143W; Transistor Case Style:TO-252AA; No.

    MOSFET, N-CH, 60V, 50A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:143W; Transistor Case Style:TO-252AA; No.

    Infineon Irlr3636Trpbf of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HEXFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, N-CH, 80V, 300A, PG-HSOF-8; Transistor Polarity:N Channel; Continuous Drain Current Id:300A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.001ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:375W; Transistor Case Style:PG-HSOF; No.

    MOSFET, N-CH, 80V, 300A, PG-HSOF-8; Transistor Polarity:N Channel; Continuous Drain Current Id:300A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.001ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:375W; Transistor Case Style:PG-HSOF; No.

    Infineon Ipt012N08N5Atma1 of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON