reorder
ALWAYS Be Happy search home
c
Combo Blog
Categories
Play Games New
Eletrônicos
Componentes e placas de circuitos
Semicondutores
Semiconductors - Discretes
IXYS SEMICONDUCTOR

Ixys Semiconductor Ixgh16N170

About The 7V; Power Dissipation Pd:190W; Collector Emitter Voltage V(br)ceo:1. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)

IGBT, SINGLE, N-CH, 1.7KV, 32A, TO-247; DC Collector Current:32A; Collector Emitter Saturation Voltage Vce(on):2.7V; Power Dissipation Pd:190W; Collector Emitter Voltage V(br)ceo:1.7kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)

Semiconductors - Discretes

Ixys Semiconductor Ixgh16N170

More from IXYS SEMICONDUCTOR? IGBT, SINGLE, N-CH, 1.7KV, 32A, TO-247; DC Collector Current:32A; Collector Emitter Saturation Voltage Vce(on):2.7V; Power Dissipation Pd:190W; Collector Emitter Voltage V(br)ceo:1.7kV; Transistor Case Style:TO-247; No.
Search

Semiconductors - Discretes

Specifications of Ixys Semiconductor Ixgh16N170

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
Instockinstock

Last Updated

Ixys Semiconductor Ixgh16N170
More Varieties
Eletrônicos
Componentes e placas de circuitos

Rating :- 9.95 /10
Votes :- 52
MOSFET, N-CH, 150V, 62A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.04ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:350W; Transistor Case Style:TO-220; No.

MOSFET, N-CH, 150V, 62A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.04ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:350W; Transistor Case Style:TO-220; No.

Ixys Semiconductor Ixtp62N15P of Pins:3Pins; Operating Temperature Max:175°C; Product Range:PolarHT Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • IXYS SEMICONDUCTOR
    • MOSFET, N-CH, 650V, 4A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.85ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:80W; Transistor Case Style:TO-220; No.

    MOSFET, N-CH, 650V, 4A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.85ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:80W; Transistor Case Style:TO-220; No.

    Ixys Semiconductor Ixtp4N65X2 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • IXYS SEMICONDUCTOR
    • MOSFET, N-CH, 650V, 120A, TO-264P; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:1.25kW; Transistor Case Style:TO-264P; No.

    MOSFET, N-CH, 650V, 120A, TO-264P; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:1.25kW; Transistor Case Style:TO-264P; No.

    Ixys Semiconductor Ixtk120N65X2 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • IXYS SEMICONDUCTOR
    • MOSFET, N-CH, 650V, 62A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:780W; Transistor Case Style:TO-247; No.

    MOSFET, N-CH, 650V, 62A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:780W; Transistor Case Style:TO-247; No.

    Ixys Semiconductor Ixth62N65X2 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • IXYS SEMICONDUCTOR
    • MOSFET, N-CH, 650V, 62A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:780W; Transistor Case Style:TO-247; No.

    MOSFET, N-CH, 650V, 62A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:780W; Transistor Case Style:TO-247; No.

    Ixys Semiconductor Ixth62N65X2 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • IXYS SEMICONDUCTOR