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IXYS SEMICONDUCTOR

Ixys Semiconductor Ixfq20N50P3

About The MOSFET, N-CH, 500V, 20A, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:380W; Transistor Case Style:TO-3P; No

MOSFET, N-CH, 500V, 20A, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:380W; Transistor Case Style:TO-3P; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:Polar3 HiPerFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)

Semiconductors - Discretes

Ixys Semiconductor Ixfq20N50P3

Semiconductors - Discretes

Specifications of Ixys Semiconductor Ixfq20N50P3

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Ixys Semiconductor Ixfq20N50P3
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SCR THYRISTOR, 50A, 1.6KV, TO-240AA; SCR Module Type:Series Connected - SCRs; Peak Repetitive Off-State Voltage, Vdrm:1.6kV; Gate Trigger Current Max, Igt:100mA; Current It av:27A; On State RMS Current IT(rms):50A; Peak Non Rep Surge Current Itsm 50Hz:520A; Holding Current Max Ih:200mA; Gate Trigger Voltage Max Vgt:1.5V; Operating Temperature Max:100°C; Product Range:-; SVHC:No SVHC (12-Jan-2017); No.
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    • MOSFET, N-CH, 150V, 62A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.04ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:350W; Transistor Case Style:TO-220; No.

    MOSFET, N-CH, 150V, 62A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.04ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:350W; Transistor Case Style:TO-220; No.

    Ixys Semiconductor Ixtp62N15P of Pins:3Pins; Operating Temperature Max:175°C; Product Range:PolarHT Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017).

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  • IXYS SEMICONDUCTOR
    • MOSFET, N-CH, 650V, 4A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.85ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:80W; Transistor Case Style:TO-220; No.

    MOSFET, N-CH, 650V, 4A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.85ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:80W; Transistor Case Style:TO-220; No.

    Ixys Semiconductor Ixtp4N65X2 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017).

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  • IXYS SEMICONDUCTOR
    • MOSFET, N-CH, 650V, 120A, TO-264P; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:1.25kW; Transistor Case Style:TO-264P; No.

    MOSFET, N-CH, 650V, 120A, TO-264P; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:1.25kW; Transistor Case Style:TO-264P; No.

    Ixys Semiconductor Ixtk120N65X2 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017).

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  • IXYS SEMICONDUCTOR
    • MOSFET, N-CH, 650V, 62A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:780W; Transistor Case Style:TO-247; No.

    MOSFET, N-CH, 650V, 62A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:780W; Transistor Case Style:TO-247; No.

    Ixys Semiconductor Ixth62N65X2 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017).

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  • IXYS SEMICONDUCTOR
    • IGBT, SINGLE, N-CH, 1.7KV, 50A, TO-247; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:1.7kV; Transistor Case Style:TO-247; No.

    IGBT, SINGLE, N-CH, 1.7KV, 50A, TO-247; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:1.7kV; Transistor Case Style:TO-247; No.

    Ixys Semiconductor Ixgh24N170 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017).

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  • IXYS SEMICONDUCTOR
    • IGBT, SINGLE, N-CH, 1.7KV, 32A, TO-247; DC Collector Current:32A; Collector Emitter Saturation Voltage Vce(on):2.7V; Power Dissipation Pd:190W; Collector Emitter Voltage V(br)ceo:1.7kV; Transistor Case Style:TO-247; No.

    IGBT, SINGLE, N-CH, 1.7KV, 32A, TO-247; DC Collector Current:32A; Collector Emitter Saturation Voltage Vce(on):2.7V; Power Dissipation Pd:190W; Collector Emitter Voltage V(br)ceo:1.7kV; Transistor Case Style:TO-247; No.

    Ixys Semiconductor Ixgh16N170 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017).

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  • IXYS SEMICONDUCTOR
    • MOSFET, N-CH, 500V, 20A, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:380W; Transistor Case Style:TO-3P; No.

    MOSFET, N-CH, 500V, 20A, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:380W; Transistor Case Style:TO-3P; No.

    Ixys Semiconductor Ixfq20N50P3 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:Polar3 HiPerFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017).

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  • IXYS SEMICONDUCTOR
    • IGBT, SINGLE, N-CH, 1.7KV, 32A, TO-247; DC Collector Current:32A; Collector Emitter Saturation Voltage Vce(on):2.7V; Power Dissipation Pd:190W; Collector Emitter Voltage V(br)ceo:1.7kV; Transistor Case Style:TO-247; No.

    IGBT, SINGLE, N-CH, 1.7KV, 32A, TO-247; DC Collector Current:32A; Collector Emitter Saturation Voltage Vce(on):2.7V; Power Dissipation Pd:190W; Collector Emitter Voltage V(br)ceo:1.7kV; Transistor Case Style:TO-247; No.

    Ixys Semiconductor Ixgh16N170 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017).

  • Eletrônicos
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  • IXYS SEMICONDUCTOR
    • MOSFET, N-CH, 500V, 20A, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:380W; Transistor Case Style:TO-3P; No.

    MOSFET, N-CH, 500V, 20A, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:380W; Transistor Case Style:TO-3P; No.

    Ixys Semiconductor Ixfq20N50P3 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:Polar3 HiPerFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017).

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  • IXYS SEMICONDUCTOR