Ixys Semiconductor Ixfh26N50P3

Rating :- 9.97 /10

Votes :- 54

IGBT, MODULE, N-CH, 1.2KV, 19A; Transistor Polarity:N Channel; DC Collector Current:19A; Collector Emitter Saturation Voltage Vce(on):3V; Power Dissipation Pd:90W; Collector Emitter ; Available until stocks are exhausted

Ixys Semiconductor Mubw15-12A6K.

DIODE MODULE, DUAL, 1.6KV, 71A; Repetitive Reverse Voltage Vrrm Max:1.6kV; Forward Current If(AV):71A; Forward Voltage VF Max:1.21V; Diode Module Configuration:Dual Series; Product Range:MDD56 Series; SVHC:No SVHC (07-Jul-2017)

Ixys Semiconductor Mdd56-16N1B.

DIODE MODULE, DUAL, 1.6KV, 36A; Repetitive Reverse Voltage Vrrm Max:1.6kV; Forward Current If(AV):36A; Forward Voltage VF Max:1.13V; Diode Module Configuration:Dual Series; Product Range:MDD26 Series; SVHC:No SVHC (07-Jul-2017)

Ixys Semiconductor Mdd26-16N1B.

THYRISTOR MODULE, 1.2KV, 60A; SCR Module Type:Series Connected - SCRs; Peak Repetitive Off-State Voltage, Vdrm:1.2kV; Gate Trigger Current Max, Igt:100mA; Current It av:60A; On State RMS Current IT(rms):94A; Peak Non Rep Surge Current Itsm 50Hz:1.5kA; Holding Current Max Ih:200mA; Gate Trigger Voltage Max Vgt:1.5V; Operating Temperature Max:100Â°C; Product Range:-; SVHC:No SVHC (07-Jul-2017)

Ixys Semiconductor Mcc56-12Io1B.

THYRISTOR MODULE, 1.2KV, 181A; SCR Module Type:Series Connected - SCRs; Peak Repetitive Off-State Voltage, Vdrm:1.2kV; Gate Trigger Current Max, Igt:150mA; Current It av:181A; On State RMS Current IT(rms):300A; Peak Non Rep Surge Current Itsm 50Hz:6kA; Holding Current Max Ih:200mA; Gate Trigger Voltage Max Vgt:2.5V; Operating Temperature Max:100Â°C; Product Range:-; SVHC:No SVHC (07-Jul-2017)

Ixys Semiconductor Mcc162-12Io1.

MOSFET, N-CH, 300V, 36A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.092ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:300W; Transistor Case Style:TO-220; No.

Ixys Semiconductor Ixtp36N30P of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:PolarHT Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017).

MOSFET, N-CH, 500V, 26A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:500W; Transistor Case Style:TO-247; No.

Ixys Semiconductor Ixfh26N50P3 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:Polar3 HiperFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017).

of Phases:Three Phase; Repetitive Reverse Voltage Vrrm Max:1.6kV; Forward Current If(AV):50A; Bridge Rectifier Case Style:i4-PAC; Forward Voltage VF Max:1.15V; No.

Ixys Semiconductor Fuo50-16N.of Pins:5Pins; Operating Temperature Max:175Â°C; Product Range:ISOPLUS Series; SVHC:No SVHC (07-Jul-2017) BRIDGE RECT, 3-PH, 50A, 1.6KV, I4-PAC; No.

MOSFET, N-CH, 500V, 26A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:500W; Transistor Case Style:TO-247; No.

of Phases:Three Phase; Repetitive Reverse Voltage Vrrm Max:1.6kV; Forward Current If(AV):50A; Bridge Rectifier Case Style:i4-PAC; Forward Voltage VF Max:1.15V; No.

Ixys Semiconductor Fuo50-16N.6KV, I4-PAC; No.of Pins:5Pins; Operating Temperature Max:175Â°C; Product Range:ISOPLUS Series; SVHC:No SVHC (07-Jul-2017) BRIDGE RECT, 3-PH, 50A, 1.