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Nexperia Buk7Y1R7-40Hx

About The MOSFET, AEC-Q101, N-CH, 40V, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:294W; Transistor Case Style:SOT-669; No

MOSFET, AEC-Q101, N-CH, 40V, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:294W; Transistor Case Style:SOT-669; No. of Pins:4Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

Semiconductors - Discretes

Nexperia Buk7Y1R7-40Hx

Semiconductors - Discretes

Specifications of Nexperia Buk7Y1R7-40Hx

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Nexperia Buk7Y1R7-40Hx
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Rating :- 9.95 /10
Votes :- 54
SCHOTTKY RECT, AEC-Q101, 40V, SOD-123W; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):1A; Diode Configuration:Single; Diode Case Style:SOD-123W; No.

SCHOTTKY RECT, AEC-Q101, 40V, SOD-123W; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):1A; Diode Configuration:Single; Diode Case Style:SOD-123W; No.

Nexperia Pmeg40T10Erx of Pins:2Pins; Forward Voltage VF Max:460mV; Forward Surge Current Ifsm Max:20A; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; SVHC:Lead (27-Jun-2018); Semiconductor Technology:Si.

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    • SCHOTTKY RECT, AEC-Q101, 45V, SOT-1289; Repetitive Reverse Voltage Vrrm Max:45V; Forward Current If(AV):10A; Diode Configuration:Single; Diode Case Style:SOT-1289; No.

    SCHOTTKY RECT, AEC-Q101, 45V, SOT-1289; Repetitive Reverse Voltage Vrrm Max:45V; Forward Current If(AV):10A; Diode Configuration:Single; Diode Case Style:SOT-1289; No.

    Nexperia Pmeg045T100Epdz of Pins:3Pins; Forward Voltage VF Max:545mV; Forward Surge Current Ifsm Max:130A; Operating Temperature Max:175°C; Product Range:PMEG0 Series; Automotive Qualification Standard:AEC-Q101; SVHC:Lead (27-Jun-2018); Semiconductor Technology:Si.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, AEC-Q101, N-CH, 40V, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00213ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:190W; Transistor Case Style:SOT-669; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, AUTO, DUAL N-CH, 80V, SOT1205; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0157ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:64W; Transistor Case Style:SOT-1205; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, AEC-Q101, N-CH, 40V, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:294W; Transistor Case Style:SOT-669; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, AEC-Q101, N-CH, 40V, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00213ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:190W; Transistor Case Style:SOT-669; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, AEC-Q101, N-CH, 40V, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:294W; Transistor Case Style:SOT-669; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, AUTO, DUAL N-CH, 80V, SOT1205; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0157ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:64W; Transistor Case Style:SOT-1205; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, AEC-Q101, N-CH, 40V, SOT-669-4; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:294W; Transistor Case Style:SOT-669; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, AUTO, DUAL N-CH, 80V, SOT1205; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0157ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:64W; Transistor Case Style:SOT-1205; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA