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ONSEMI

Onsemi Mun5330Dw1T1G

About The TRANSISTOR, AEC-Q101, NPN/PNP, 50V; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:1kohm; Base-Emitter Resistor R2:1kohm; Resistor Ratio, R1 / R2:1(Ratio); RF Transistor Case:SOT-363; No. of Pins:6 Pin; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

TRANSISTOR, AEC-Q101, NPN/PNP, 50V; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:1kohm; Base-Emitter Resistor R2:1kohm; Resistor Ratio, R1 / R2:1(Ratio); RF Transistor Case:SOT-363; No. of Pins:6 Pin; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

Semiconductors - Discretes

Onsemi Mun5330Dw1T1G

Semiconductors - Discretes

Specifications of Onsemi Mun5330Dw1T1G

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Onsemi Mun5330Dw1T1G
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Rating :- 8.11 /10
Votes :- 52
TRANSISTOR ARRAY, NPN, 50V, SOIC; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:-; DC Collector Current:500mA; DC Current Gain hFE:1000hFE; Transistor Case Style:SOIC; No.

TRANSISTOR ARRAY, NPN, 50V, SOIC; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:-; DC Collector Current:500mA; DC Current Gain hFE:1000hFE; Transistor Case Style:SOIC; No.

Onsemi Ulq2003Adr2G of Pins:16Pins; Operating Temperature Max:85°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

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    • TRANSISTOR ARRAY, NPN, 50V, SOIC; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:-; DC Collector Current:500mA; DC Current Gain hFE:1000hFE; Transistor Case Style:SOIC; No.

    TRANSISTOR ARRAY, NPN, 50V, SOIC; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:-; DC Collector Current:500mA; DC Current Gain hFE:1000hFE; Transistor Case Style:SOIC; No.

    Onsemi Ncv1413Bdr2G of Pins:16Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR ARRAY, NPN/PNP, 1.1V, SOIC; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:1.1V; Power Dissipation Pd:-; DC Collector Current:500mA; DC Current Gain hFE:1000hFE; Transistor Case Style:SOIC; No.

    TRANSISTOR ARRAY, NPN/PNP, 1.1V, SOIC; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:1.1V; Power Dissipation Pd:-; DC Collector Current:500mA; DC Current Gain hFE:1000hFE; Transistor Case Style:SOIC; No.

    Onsemi Mc1413Dr2G of Pins:16Pins; Operating Temperature Max:85°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - ICs
  • ONSEMI
    • TRANSISTOR ARRAY, NPN, 1.1V, SOIC; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:1.1V; Power Dissipation Pd:-; DC Collector Current:500mA; DC Current Gain hFE:1000hFE; Transistor Case Style:SOIC; No.

    TRANSISTOR ARRAY, NPN, 1.1V, SOIC; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:1.1V; Power Dissipation Pd:-; DC Collector Current:500mA; DC Current Gain hFE:1000hFE; Transistor Case Style:SOIC; No.

    Onsemi Mc1413Bdr2G of Pins:16Pins; Operating Temperature Max:85°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

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  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - ICs
  • ONSEMI
    • TRANSISTOR ARRAY, DUAL COMP, 40V, SOT963; Transistor Polarity:N and P Complement; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:240mW; DC Collector Current:200mA; DC Current Gain hFE:30hFE; Transistor Case Style:SOT-963; No.

    TRANSISTOR ARRAY, DUAL COMP, 40V, SOT963; Transistor Polarity:N and P Complement; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:240mW; DC Collector Current:200mA; DC Current Gain hFE:30hFE; Transistor Case Style:SOT-963; No.

    Onsemi Nst3946Dp6T5G of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANS, NPN/PNP, 50V, 0.1A, SOT-563; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:0.047(Ratio); RF Transistor Case:SOT-563; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, AEC-Q101, NPN/PNP, 50V; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:1kohm; Base-Emitter Resistor R2:1kohm; Resistor Ratio, R1 / R2:1(Ratio); RF Transistor Case:SOT-363; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANS, NPN, 50V, 0.1A, SOT-23; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:2.2kohm; Resistor Ratio, R1 / R2:1(Ratio); RF Transistor Case:SOT-23; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, AEC-Q101, NPN/PNP, 50V; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:1kohm; Base-Emitter Resistor R2:1kohm; Resistor Ratio, R1 / R2:1(Ratio); RF Transistor Case:SOT-363; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANS, NPN, 50V, 0.1A, SOT-23; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:2.2kohm; Resistor Ratio, R1 / R2:1(Ratio); RF Transistor Case:SOT-23; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI