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Stmicroelectronics Std6N60M2

About The of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MDmesh Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).5A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4

MOSFET, N-CH, 600V, 4.5A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.06ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MDmesh Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

Semiconductors - Discretes

Stmicroelectronics Std6N60M2

More from STMICROELECTRONICS? MOSFET, N-CH, 600V, 4.5A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.06ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No.
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Semiconductors - Discretes

Specifications of Stmicroelectronics Std6N60M2

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Stmicroelectronics Std6N60M2
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Rating :- 9.88 /10
Votes :- 53
MOSFET, N-CH, 650V, 28A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:190W; Transistor Case Style:TO-263; No.

MOSFET, N-CH, 650V, 28A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:190W; Transistor Case Style:TO-263; No.

Stmicroelectronics Stb34N65M5 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MDmesh Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

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    • IGBT, SINGLE, 600V, 15A, TO-252; DC Collector Current:15A; Collector Emitter Saturation Voltage Vce(on):2.2V; Power Dissipation Pd:62W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-252; No.

    IGBT, SINGLE, 600V, 15A, TO-252; DC Collector Current:15A; Collector Emitter Saturation Voltage Vce(on):2.2V; Power Dissipation Pd:62W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-252; No.

    Stmicroelectronics Stgd8Nc60Kdt4 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:PowerMESH Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

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  • STMICROELECTRONICS
    • IGBT, SINGLE, 600V, 25A, TO-252; DC Collector Current:25A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:70W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-252; No.

    IGBT, SINGLE, 600V, 25A, TO-252; DC Collector Current:25A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:70W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-252; No.

    Stmicroelectronics Stgd7Nc60Ht4 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:PowerMESH Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

  • Eletrônicos
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  • STMICROELECTRONICS
    • MOSFET, N-CH, 600V, 4.5A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.06ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No.

    MOSFET, N-CH, 600V, 4.5A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.06ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No.

    Stmicroelectronics Std6N60M2 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MDmesh Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

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  • STMICROELECTRONICS
    • MOSFET, N-CH, 100V, 80A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:120W; Transistor Case Style:TO-263; No.

    MOSFET, N-CH, 100V, 80A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:120W; Transistor Case Style:TO-263; No.

    Stmicroelectronics Stb100N10F7 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:STripFET VII DeepGATE Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

  • Eletrônicos
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  • STMICROELECTRONICS
    • IGBT, SINGLE, 600V, 15A, TO-252; DC Collector Current:15A; Collector Emitter Saturation Voltage Vce(on):2.2V; Power Dissipation Pd:62W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-252; No.

    IGBT, SINGLE, 600V, 15A, TO-252; DC Collector Current:15A; Collector Emitter Saturation Voltage Vce(on):2.2V; Power Dissipation Pd:62W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-252; No.

    Stmicroelectronics Stgd8Nc60Kdt4 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:PowerMESH Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

  • Eletrônicos
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  • Semicondutores
  • Semiconductors - Discretes
  • STMICROELECTRONICS
    • IGBT, SINGLE, 600V, 25A, TO-252; DC Collector Current:25A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:70W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-252; No.

    IGBT, SINGLE, 600V, 25A, TO-252; DC Collector Current:25A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:70W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-252; No.

    Stmicroelectronics Stgd7Nc60Ht4 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:PowerMESH Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

  • Eletrônicos
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  • STMICROELECTRONICS
    • MOSFET, N-CH, 600V, 4.5A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.06ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No.

    MOSFET, N-CH, 600V, 4.5A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.06ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No.

    Stmicroelectronics Std6N60M2 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MDmesh Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • STMICROELECTRONICS
    • IGBT, SINGLE, 600V, 25A, TO-252; DC Collector Current:25A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:70W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-252; No.

    IGBT, SINGLE, 600V, 25A, TO-252; DC Collector Current:25A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:70W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-252; No.

    Stmicroelectronics Stgd7Nc60Ht4 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:PowerMESH Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • STMICROELECTRONICS
    • MOSFET, N-CH, 600V, 4.5A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.06ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No.

    MOSFET, N-CH, 600V, 4.5A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.06ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No.

    Stmicroelectronics Std6N60M2 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MDmesh Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • STMICROELECTRONICS