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VISHAY

Vishay Sia106Dj-T1-Ge3

About The MOSFET, N-CH, 60V, 12A, 150DEG C, 19W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0142ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:19W; Transistor Case Style:PowerPAK SC70; No

MOSFET, N-CH, 60V, 12A, 150DEG C, 19W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0142ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:19W; Transistor Case Style:PowerPAK SC70; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

Semiconductors - Discretes

Vishay Sia106Dj-T1-Ge3

Semiconductors - Discretes

Specifications of Vishay Sia106Dj-T1-Ge3

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Vishay Sia106Dj-T1-Ge3
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Rating :- 8.07 /10
Votes :- 50
MOSFET, N-CH, 60V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.4V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

MOSFET, N-CH, 60V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.4V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

Vishay Sidr626Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

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    • MOSFET, N-CH, 80V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.4V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, N-CH, 80V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.4V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sidr680Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

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  • VISHAY
    • MOSFET, N-CH, 40V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, N-CH, 40V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sidr402Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

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  • Semicondutores
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  • VISHAY
    • MOSFET, N-CH, 30V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, N-CH, 30V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sidr392Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, N-CH, 30V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, N-CH, 30V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sidr392Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

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