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SMART POWER STAGE MOD, POWERPAK MLP55-32; Input Voltage Min:4.5V; Input Voltage Max:18V; PWM Input Frequency:2MHz; Digital IC Case:PowerPAK MLP55; No.
  • Eletrônicos
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  • VISHAY
    • MOSFET, N-CH, 60V, 12A, 150DEG C, 19W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0142ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:19W; Transistor Case Style:PowerPAK SC70; No.

    MOSFET, N-CH, 60V, 12A, 150DEG C, 19W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0142ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:19W; Transistor Case Style:PowerPAK SC70; No.

    Vishay Sia106Dj-T1-Ge3 of Pins:6Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
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  • VISHAY
    • MOSFET, N-CH, 60V, 12A, 150DEG C, 19W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0142ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:19W; Transistor Case Style:PowerPAK SC70; No.

    MOSFET, N-CH, 60V, 12A, 150DEG C, 19W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0142ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:19W; Transistor Case Style:PowerPAK SC70; No.

    Vishay Sia106Dj-T1-Ge3 of Pins:6Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
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  • VISHAY
    • MOSFET, N-CH, 100V, 12A, 150DEG C, 19W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:19W; Transistor Case Style:PowerPAK SC70; No.

    MOSFET, N-CH, 100V, 12A, 150DEG C, 19W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:19W; Transistor Case Style:PowerPAK SC70; No.

    Vishay Sia110Dj-T1-Ge3 of Pins:6Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
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  • VISHAY
    • MOSFET, N-CH, 30V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, N-CH, 30V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sidr392Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
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  • VISHAY
    • MOSFET, N-CH, 40V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, N-CH, 40V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sidr402Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
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  • VISHAY
    • MOSFET, N-CH, 80V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.4V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, N-CH, 80V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.4V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sidr680Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
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  • VISHAY
    • MOSFET, N-CH, 60V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.4V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, N-CH, 60V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.4V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sidr626Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
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  • VISHAY
    • MOSFET, N-CH, 40V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, N-CH, 40V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sidr638Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
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  • VISHAY
    • MOSFET, N-CH, 100V, 12A, 150DEG C, 19W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:19W; Transistor Case Style:PowerPAK SC70; No.

    MOSFET, N-CH, 100V, 12A, 150DEG C, 19W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:19W; Transistor Case Style:PowerPAK SC70; No.

    Vishay Sia110Dj-T1-Ge3 of Pins:6Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
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  • VISHAY
    • MOSFET, N-CH, 30V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, N-CH, 30V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sidr392Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
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  • VISHAY
    • MOSFET, N-CH, 40V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, N-CH, 40V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sidr402Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
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  • VISHAY
    • MOSFET, N-CH, 60V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.4V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, N-CH, 60V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.4V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sidr626Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
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  • VISHAY
    • MOSFET, N-CH, 40V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, N-CH, 40V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sidr638Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
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  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, N-CH, 80V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.4V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, N-CH, 80V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.4V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sidr680Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • VISHAY
    • MOSFET, N-CH, 800V, 12A, 150DEG C, 34W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:34W; Transistor Case Style:TO-220FP; No.
  • Eletrônicos
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  • VISHAY
    • MOSFET, N-CH, 500V, 14.5A, 150DEG C, 33W; Transistor Polarity:N Channel; Continuous Drain Current Id:14.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.243ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:33W; Transistor Case Style:TO-220FP; No.
  • Eletrônicos
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  • VISHAY
    • MOSFET, N-CH, 800V, 15A, 150DEG C, 35W; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:35W; Transistor Case Style:TO-220FP; No.
  • Eletrônicos
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  • VISHAY
    • MOSFET, N-CH, 600V, 20A, 150DEG C, 33W; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.156ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:33W; Transistor Case Style:TO-220FP; No.
  • Eletrônicos
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  • VISHAY
    • MOSFET, N-CH, 650V, 24A, 150DEG C, 39W; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:39W; Transistor Case Style:TO-220FP; No.
  • Eletrônicos
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  • VISHAY
    • MOSFET, N-CH, 600V, 25A, 150DEG C, 39W; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.127ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:39W; Transistor Case Style:TO-220FP; No.
  • Eletrônicos
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  • VISHAY
    • MOSFET, N-CH, 800V, 12A, 150DEG C, 179W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:179W; Transistor Case Style:TO-263; No.
  • Eletrônicos
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  • VISHAY
    • MOSFET, N-CH, 800V, 12A, 150DEG C, 179W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:179W; Transistor Case Style:TO-263; No.
  • Eletrônicos
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  • VISHAY
    • MOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:69W; Transistor Case Style:TO-252; No.
  • Eletrônicos
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  • VISHAY
    • MOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:69W; Transistor Case Style:TO-252; No.
  • Eletrônicos
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  • Semicondutores
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  • VISHAY
    • MOSFET, N-CH, 600V, 40A, 150DEG C, 313W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.061ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:313W; Transistor Case Style:TO-247AC; No.
  • Eletrônicos
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  • Semicondutores
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  • VISHAY
    • MOSFET, N-CH, 30V, 40A, 150DEG C, 62.5W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:62.5W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, N-CH, 30V, 40A, 150DEG C, 62.5W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:62.5W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sir164Adp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
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  • Semicondutores
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  • VISHAY
    • MOSFET, P-CH, -30V, -60A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.3V; Power Dissipation Pd:65.8W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, P-CH, -30V, -60A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.3V; Power Dissipation Pd:65.8W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sir165Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen III Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, P-CH, -30V, -60A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:65.8W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, P-CH, -30V, -60A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:65.8W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sir167Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen III Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
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  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, N-CH, 30V, 40A, 150DEG C, 62.5W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:62.5W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, N-CH, 30V, 40A, 150DEG C, 62.5W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:62.5W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sir164Adp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

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