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VISHAY

Vishay Sir165Dp-T1-Ge3

About The 0038ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.3V; Power Dissipation Pd:65

MOSFET, P-CH, -30V, -60A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.3V; Power Dissipation Pd:65.8W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen III Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

Semiconductors - Discretes

Vishay Sir165Dp-T1-Ge3

More from VISHAY? MOSFET, P-CH, -30V, -60A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.3V; Power Dissipation Pd:65.8W; Transistor Case Style:PowerPAK SO; No.
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Semiconductors - Discretes

Specifications of Vishay Sir165Dp-T1-Ge3

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Vishay Sir165Dp-T1-Ge3
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Rating :- 9.97 /10
Votes :- 53
MOSFET, N-CH, 100V, 93.6A, 150DEG C; Transistor Polarity:N Channel; Continuous Drain Current Id:93.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.004ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:104W; Transistor Case Style:PowerPAK SO; No.

MOSFET, N-CH, 100V, 93.6A, 150DEG C; Transistor Polarity:N Channel; Continuous Drain Current Id:93.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.004ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:104W; Transistor Case Style:PowerPAK SO; No.

Vishay Sir668Adp-T1-Re3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

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  • Componentes e placas de circuitos
  • Semicondutores
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  • VISHAY
    • MOSFET, P-CH, -30V, -60A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:65.8W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, P-CH, -30V, -60A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:65.8W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sir167Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen III Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, P-CH, -30V, -60A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.3V; Power Dissipation Pd:65.8W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, P-CH, -30V, -60A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.3V; Power Dissipation Pd:65.8W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sir165Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen III Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, N-CH, 30V, 40A, 150DEG C, 62.5W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:62.5W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, N-CH, 30V, 40A, 150DEG C, 62.5W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:62.5W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sir164Adp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, N-CH, 30V, 40A, 150DEG C, 62.5W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:62.5W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, N-CH, 30V, 40A, 150DEG C, 62.5W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:62.5W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sir164Adp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

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  • Semicondutores
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  • VISHAY