reorder
ALWAYS Be Happy search home
c
Combo Blog
Categories
Play Games New
Eletrônicos
Componentes e placas de circuitos
Semicondutores
Semiconductors - Discretes
INFINEON

Infineon Ipb110N20N3Lfatma1

About The 2V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No.0098ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3

MOSFET, N-CH, 200V, 88A, 250W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:88A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0098ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 3 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

Semiconductors - Discretes

Infineon Ipb110N20N3Lfatma1

Semiconductors - Discretes

Specifications of Infineon Ipb110N20N3Lfatma1

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
Instockinstock

Last Updated

Infineon Ipb110N20N3Lfatma1
More Varieties
Eletrônicos
Componentes e placas de circuitos

Rating :- 8.03 /10
Votes :- 52
MOSFET, AEC-Q101, N-CH, 40V, 100A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:115W; Transistor Case Style:TDSON; No.

MOSFET, AEC-Q101, N-CH, 40V, 100A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:115W; Transistor Case Style:TDSON; No.

Infineon Ipc100N04S5L1R5Atma1 of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, AEC-Q101, N-CH, 40V, 100A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:75W; Transistor Case Style:TDSON; No.

    MOSFET, AEC-Q101, N-CH, 40V, 100A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:75W; Transistor Case Style:TDSON; No.

    Infineon Ipc100N04S52R8Atma1 of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, N-CH, 200V, 88A, 250W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:88A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0098ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No.

    MOSFET, N-CH, 200V, 88A, 250W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:88A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0098ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.2V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No.

    Infineon Ipb110N20N3Lfatma1 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 3 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, N-CH, 150V, 120A, 313W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.1V; Power Dissipation Pd:313W; Transistor Case Style:TO-263; No.

    MOSFET, N-CH, 150V, 120A, 313W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.1V; Power Dissipation Pd:313W; Transistor Case Style:TO-263; No.

    Infineon Ipb048N15N5Lfatma1 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, N-CH, 150V, 120A, 313W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.1V; Power Dissipation Pd:313W; Transistor Case Style:TO-263; No.

    MOSFET, N-CH, 150V, 120A, 313W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.1V; Power Dissipation Pd:313W; Transistor Case Style:TO-263; No.

    Infineon Ipb048N15N5Lfatma1 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON