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Onsemi Hgtg11N120Cnd

About The 4V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:1.IGBT, N; DC Collector Current:43A; Collector Emitter Saturation Voltage Vce(on):2

IGBT, N; DC Collector Current:43A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Current Ic Continuous a Max:43A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:298W; Termination Type:Surface Mount Device; Transistor Polarity:N Channel; Transistor Type:IGBT; Voltage Vces:1.2kV

Semiconductors - Discretes

Onsemi Hgtg11N120Cnd

Semiconductors - Discretes

Specifications of Onsemi Hgtg11N120Cnd

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Onsemi Hgtg11N120Cnd
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