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MOSFET, NN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No.
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  • ONSEMI
    • TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:1.5W; DC Collector Current:50mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-223; No.

    TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:1.5W; DC Collector Current:50mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-223; No.

    Onsemi Pzta42T1G of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):500mV; Current Ic Continuous a Max:50mA; Diode Type:Standard Recovery; Hfe Min:25; Junction Temperature Tj Max:150°C; Termination Type:Surface Mount Device.

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  • ONSEMI
    • MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.105ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.8V; Power Dissipation Pd:3W; Transistor Case Style:SOT-223; No.

    MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.105ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.8V; Power Dissipation Pd:3W; Transistor Case Style:SOT-223; No.

    8V; Voltage Vgs Rds on Measurement:10V.Onsemi Fdt458P of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:3.

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  • ONSEMI
    • TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:150MHz; Power Dissipation Pd:225mW; DC Collector Current:500mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:150MHz; Power Dissipation Pd:225mW; DC Collector Current:500mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbt8099Lt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:150MHz; Hfe Min:75; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.

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  • ONSEMI
    • MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:70W; Transistor Case Style:TO-252; No.

    MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:70W; Transistor Case Style:TO-252; No.

    Stmicroelectronics Std15Nf10T4 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:23A; On State resistance @ Vgs = 10V:65mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Termination Type:Surface Mount Device; Voltage Vds Typ:100V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V.

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  • STMICROELECTRONICS
    • TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:1.5W; DC Collector Current:50mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-223; No.

    TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:1.5W; DC Collector Current:50mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-223; No.

    Onsemi Pzta42T1G of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):500mV; Current Ic Continuous a Max:50mA; Diode Type:Standard Recovery; Hfe Min:25; Junction Temperature Tj Max:150°C; Termination Type:Surface Mount Device.

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  • ONSEMI
    • MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.105ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.8V; Power Dissipation Pd:3W; Transistor Case Style:SOT-223; No.

    MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.105ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.8V; Power Dissipation Pd:3W; Transistor Case Style:SOT-223; No.

    4A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Voltage Vds Typ:30V; Voltage Vgs Max:-1.Onsemi Fdt458P of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:3.8V; Voltage Vgs Rds on Measurement:10V.

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  • ONSEMI
    • THYRISTOR; Peak Repetitive Off-State Voltage, Vdrm:100V; Gate Trigger Current Max, Igt:25µA; Current It av:2.6A; On State RMS Current IT(rms):4A; Thyristor Case Style:TO-252; No.

    THYRISTOR; Peak Repetitive Off-State Voltage, Vdrm:100V; Gate Trigger Current Max, Igt:25µA; Current It av:2.6A; On State RMS Current IT(rms):4A; Thyristor Case Style:TO-252; No.

    Littelfuse Mcr703At4G of Pins:3Pins; Peak Non Rep Surge Current Itsm 50Hz:25A; Holding Current Max Ih:5mA; Gate Trigger Voltage Max Vgt:800mV; Operating Temperature Max:110°C; Product Range:-; MSL:-; Current Itsm:25A; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +110°C; Termination Type:Surface Mount Device; Thyristor Case:TO-252; Thyristor Type:Thyristor.

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  • LITTELFUSE
    • MOSFET, NP; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:1.25W; Transistor Case Style:µSOIC; No.
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  • INFINEON
    • TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:150MHz; Power Dissipation Pd:225mW; DC Collector Current:500mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:150MHz; Power Dissipation Pd:225mW; DC Collector Current:500mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbt8099Lt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:150MHz; Hfe Min:75; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device.

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  • ONSEMI
    • HEATSINK, TO-220, 24°C/W; Thermal Resistance:24°C/W; Packages Cooled:TO-220; External Width - Metric:19.05mm; External Height - Metric:9.67mm; External Length - Metric:19.05mm; External Diameter - Metric:-; Heat Sink Material:Aluminium; External Width - Imperial:0.75"; External Height - Imperial:0.38"; External Length - Imperial:0.75"; External Diameter - Imperial:-; Product Range:-; SVHC:No SVHC (15-Jan-2019)
  • Eletrônicos
  • Cooling & Thermal Management
  • BOYD
    • THYRISTOR; Peak Repetitive Off-State Voltage, Vdrm:100V; Gate Trigger Current Max, Igt:25µA; Current It av:2.6A; On State RMS Current IT(rms):4A; Thyristor Case Style:TO-252; No.

    THYRISTOR; Peak Repetitive Off-State Voltage, Vdrm:100V; Gate Trigger Current Max, Igt:25µA; Current It av:2.6A; On State RMS Current IT(rms):4A; Thyristor Case Style:TO-252; No.

    Littelfuse Mcr703At4G of Pins:3Pins; Peak Non Rep Surge Current Itsm 50Hz:25A; Holding Current Max Ih:5mA; Gate Trigger Voltage Max Vgt:800mV; Operating Temperature Max:110°C; Product Range:-; MSL:-; Current Itsm:25A; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +110°C; Termination Type:Surface Mount Device; Thyristor Case:TO-252; Thyristor Type:Thyristor.

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  • LITTELFUSE
    • MOSFET, NP; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:1.25W; Transistor Case Style:µSOIC; No.

    MOSFET, NP; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:1.25W; Transistor Case Style:µSOIC; No.

    Infineon Irf7509Trpbf of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 2 - 1 year; SVHC:No SVHC (27-Jun-2018); Cont Current Id N Channel:2.5V P Channel:300mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm N Channel:21A; Pulse Current Idm P Channel:16A; Termination Type:Surface Mount Device; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds N Channel:10V; Voltage Vgs Rds P Channel:10V.

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  • INFINEON
    • MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:312W; Transistor Case Style:TO-220; No.

    MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:312W; Transistor Case Style:TO-220; No.

    Stmicroelectronics Stp120Nf10 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:STP Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Current Id Max:110A; On State resistance @ Vgs = 10V:10.

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  • STMICROELECTRONICS
    • HEATSINK, BGA; Thermal Resistance:23.4°C/W; Packages Cooled:BGA; External Width - Metric:23mm; External Height - Metric:18mm; External Length - Metric:23mm; External Diameter - Metric:-; Heat Sink Material:Aluminium; External Width - Imperial:0.9"; External Height - Imperial:0.7"; External Length - Imperial:0.9"; External Diameter - Imperial:-; Product Range:-; SVHC:No SVHC (15-Jan-2019)
  • Eletrônicos
  • Cooling & Thermal Management
  • BOYD
    • MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0236ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:810mV; Power Dissipation Pd:900mW; Transistor Case Style:µFET; No.

    MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0236ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:810mV; Power Dissipation Pd:900mW; Transistor Case Style:µFET; No.

    Onsemi Fdma430Nz of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:5A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Voltage Vds Typ:30V; Voltage Vgs Max:810mV; Voltage Vgs Rds on Measurement:4.5V.

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  • ONSEMI
    • MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No.

    MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No.

    Onsemi Fds6681Z of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:-20A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Voltage Vds Typ:30V; Voltage Vgs Max:-1.8V; Voltage Vgs Rds on Measurement:10V.

  • Eletrônicos
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  • ONSEMI
    • HEATSINK, TO-220, 24.4C/W; Thermal Resistance:24.4°C/W; Packages Cooled:TO-220; External Width - Metric:13.21mm; External Height - Metric:12.7mm; External Length - Metric:19.05mm; External Diameter - Metric:-; Heat Sink Material:Aluminium; External Width - Imperial:0.52"; External Height - Imperial:0.5"; External Length - Imperial:0.75"; External Diameter - Imperial:-; Product Range:-; SVHC:No SVHC (15-Jan-2019)
  • Eletrônicos
  • Cooling & Thermal Management
  • BOYD
    • HEATSINK, BGA; Thermal Resistance:40°C/W; Packages Cooled:BGA; External Width - Metric:23mm; External Height - Metric:10mm; External Length - Metric:23mm; External Diameter - Metric:-; Heat Sink Material:Aluminium; External Width - Imperial:0.9"; External Height - Imperial:0.4"; External Length - Imperial:0.9"; External Diameter - Imperial:-; Product Range:-; SVHC:No SVHC (15-Jan-2019)
  • Eletrônicos
  • Cooling & Thermal Management
  • BOYD
    • HEATSINK; Thermal Resistance:56°C/W; Packages Cooled:TO-220; External Width - Metric:13.2mm; External Height - Metric:9.5mm; External Length - Metric:19.1mm; External Diameter - Metric:-; Heat Sink Material:Aluminium; External Width - Imperial:0.52"; External Height - Imperial:0.375"; External Length - Imperial:0.75"; External Diameter - Imperial:-; Product Range:-; SVHC:No SVHC (15-Jan-2019)
  • Eletrônicos
  • Cooling & Thermal Management
  • WAKEFIELD THERMAL
    • HEATSINK, TO-263; Thermal Resistance:18°C/W; Packages Cooled:TO-263; External Width - Metric:12.7mm; External Height - Metric:10.16mm; External Length - Metric:26.16mm; External Diameter - Metric:-; Heat Sink Material:Copper; External Width - Imperial:0.5"; External Height - Imperial:0.4"; External Length - Imperial:1.03"; External Diameter - Imperial:-; Product Range:-; SVHC:No SVHC (15-Jan-2019)
  • Eletrônicos
  • Cooling & Thermal Management
  • BOYD
    • MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0236ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:810mV; Power Dissipation Pd:900mW; Transistor Case Style:µFET; No.

    MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0236ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:810mV; Power Dissipation Pd:900mW; Transistor Case Style:µFET; No.

    5V.Onsemi Fdma430Nz of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:5A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Voltage Vds Typ:30V; Voltage Vgs Max:810mV; Voltage Vgs Rds on Measurement:4.

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  • ONSEMI
    • MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No.

    MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No.

    Onsemi Fds6681Z of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:-20A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Voltage Vds Typ:30V; Voltage Vgs Max:-1.

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  • ONSEMI
    • MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:230W; Transistor Case Style:TO-247AC; No.

    MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:230W; Transistor Case Style:TO-247AC; No.

    Vishay Irfp150Pbf of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Current Id Max:41A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.

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  • VISHAY
    • MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Drain Source Voltage Vds:500V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:83W; Transistor Case Style:TO-252; No.

    MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Drain Source Voltage Vds:500V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:83W; Transistor Case Style:TO-252; No.

    3A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V.Vishay Irfr420Apbf of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Current Id Max:3.

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  • VISHAY
    • IGBT, N; DC Collector Current:43A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No.

    IGBT, N; DC Collector Current:43A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No.

    Onsemi Hgtg11N120Cnd of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Current Ic Continuous a Max:43A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:298W; Termination Type:Surface Mount Device; Transistor Polarity:N Channel; Transistor Type:IGBT; Voltage Vces:1.2kV.

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  • ONSEMI
    • Tt Electronics / Optek Technology Opb826Sd

    Tt Electronics / Optek Technology Opb826Sd

    OPTO SWITCH. of Pins:8Pins; Operating Temperature Max:85°C; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +85°C; Optocoupler Output Type:Phototransistor; Output Voltage:30V.

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  • Sensors & Transducers
  • TT ELECTRONICS / OPTEK TECHNOLOGY
    • Tt Electronics / Optek Technology Opb866T55

    Tt Electronics / Optek Technology Opb866T55

    3V; Product Range:-; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Input Current:20mA; No.OPTO SWITCH.

  • Eletrônicos
  • Sensors & Transducers
  • TT ELECTRONICS / OPTEK TECHNOLOGY
    • Tt Electronics / Optek Technology Opb961N51/

    Tt Electronics / Optek Technology Opb961N51/

    of Pins:5Pins; Operating Temperature Max:70°C; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +70°C; Optocoupler Output Type:Schmitt Trigger; Output Voltage:35V; Output Voltage Max:30V.

  • Eletrônicos
  • Sensors & Transducers
  • TT ELECTRONICS / OPTEK TECHNOLOGY
    • INFRARED EMITTER, 890 NM, TO-46; Peak Wavelength:890nm; Angle of Half Intensity:50°; Diode Case Style:TO-46; Radiant Intensity (Ie):-; Rise Time:500ns; Fall Time tf:250ns; Forward Current If(AV):100mA; Forward Voltage VF Max:2V; Operating Temperature Min:-65°C; Operating Temperature Max:125°C; Automotive Qualification Standard:-; Product Range:-; MSL:-; SVHC:No SVHC (27-Jun-2018); No.
  • Eletrônicos
  • Optoelectronics & Displays
  • TT ELECTRONICS / OPTEK TECHNOLOGY
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