TRANSISTOR,NPNPNP,SOT363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:100hFE; RF Transistor Case:SOT-363; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Continuous Collector Current Ic:100mA; Gain Bandwidth ft Typ:100MHz; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Case Style:SOT-363
Semiconductors - Discretes
Onsemi Bc847Bpdw1T1G
Specifications of Onsemi Bc847Bpdw1T1G | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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