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TRANSISTOR, MOSFET, POLARITY N; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:400V; On Resistance Rds(on):0.55ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-220AB; No.

TRANSISTOR, MOSFET, POLARITY N; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:400V; On Resistance Rds(on):0.55ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-220AB; No.

Vishay Irf740Pbf of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Current Id Max:10A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Through Hole; Voltage Vds Typ:400V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.

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  • VISHAY
    • TRANSISTOR, MOSFET, POLARITY P; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.5A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):0.8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:74W; Transistor Case Style:TO-220AB; No.

    TRANSISTOR, MOSFET, POLARITY P; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.5A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):0.8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:74W; Transistor Case Style:TO-220AB; No.

    5A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Through Hole; Voltage Vds Typ:-200V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V.

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  • VISHAY
    • TRANSISTOR, MOSFET; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:1.6W; Transistor Case Style:SOIC; No.

    TRANSISTOR, MOSFET; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:1.6W; Transistor Case Style:SOIC; No.

    5A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Voltage Vds Typ:60V; Voltage Vgs Max:1. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:3.7V; Voltage Vgs Rds on Measurement:10V.Onsemi Nds9945.

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  • ONSEMI
    • TRANSISTOR, MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.7V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No.

    TRANSISTOR, MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.7V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No.

    7V; Voltage Vgs Rds on Measurement:-10V.Onsemi Si4435Dy of Pins:8Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:-8.

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  • ONSEMI
    • TRANSISTOR, MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:2W; Transistor Case Style:SOT-223; No.

    TRANSISTOR, MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:2W; Transistor Case Style:SOT-223; No.

    75V; Voltage Vgs Rds on Measurement:10V.Stmicroelectronics Stn1Nk60Z of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:300mA; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Voltage Vds Typ:600V; Voltage Vgs Max:3.

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  • STMICROELECTRONICS
    • TRANSISTOR, MOSFET, POLARITY N; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.5W; Transistor Case Style:SOIC; No.

    TRANSISTOR, MOSFET, POLARITY N; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.5W; Transistor Case Style:SOIC; No.

    7A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Voltage Vds Typ:150V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V.Vishay Si4848Dy-T1-E3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Current Id Max:3.

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  • VISHAY
    • TRANSISTOR, MOSFET, POLARITY N; Transistor Polarity:N Channel; Continuous Drain Current Id:7.8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:190W; Transistor Case Style:TO-247AC; No.

    TRANSISTOR, MOSFET, POLARITY N; Transistor Polarity:N Channel; Continuous Drain Current Id:7.8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:190W; Transistor Case Style:TO-247AC; No.

    Vishay Irfpe50Pbf of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Current Id Max:7.8A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.

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  • VISHAY
    • MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-23A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.117ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:120W; Transistor Case Style:TO-247AC; No.

    MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-23A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.117ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:120W; Transistor Case Style:TO-247AC; No.

    Infineon Irfp9140Npbf of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Current Id Max:-23A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V.

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  • INFINEON
    • TRANSISTOR, MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:2W; Transistor Case Style:SOT-223; No.

    TRANSISTOR, MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipation Pd:2W; Transistor Case Style:SOT-223; No.

    Stmicroelectronics Stn1Nk60Z of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Current Id Max:300mA; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Voltage Vds Typ:600V; Voltage Vgs Max:3.75V; Voltage Vgs Rds on Measurement:10V.

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  • STMICROELECTRONICS
    • TRANSISTOR, MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:550V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:192W; Transistor Case Style:TO-220; No.

    TRANSISTOR, MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:550V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:192W; Transistor Case Style:TO-220; No.

    Stmicroelectronics Stp20Nm50 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:STP Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Current Id Max:20A; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Through Hole; Voltage Vds Typ:550V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V.

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  • STMICROELECTRONICS
    • TRANSISTOR, MOSFET, POLARITY N; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.5W; Transistor Case Style:SOIC; No.

    TRANSISTOR, MOSFET, POLARITY N; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.5W; Transistor Case Style:SOIC; No.

    7A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Voltage Vds Typ:150V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V.Vishay Si4848Dy-T1-E3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Current Id Max:3.

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  • VISHAY
    • of Pins:3 Pin; Operating Temperature Max:125°C; Product Range:-; MSL:-; SVHC:No SVHC (15-Jan-2018); No.

    of Pins:3 Pin; Operating Temperature Max:125°C; Product Range:-; MSL:-; SVHC:No SVHC (15-Jan-2018); No.

    Multicomp Pro 2N2646.of Pins:3Pins; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +125°C; Peak Current:1µA; Power Dissipation Pd:300mW; Termination Type:Through Hole TRANSISTOR, UNIJUNCTION; Repetitive Peak Forward Current Itrm:2A; Peak Emitter Current:1µA; Valley Current Iv:6mA; Transistor Case Style:TO-18; No.

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  • MULTICOMP PRO
    • TRANSISTOR,NPNPNP,SOT363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:100hFE; RF Transistor Case:SOT-363; No.

    TRANSISTOR,NPNPNP,SOT363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:100hFE; RF Transistor Case:SOT-363; No.

    Onsemi Bc847Bpdw1T1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Continuous Collector Current Ic:100mA; Gain Bandwidth ft Typ:100MHz; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Case Style:SOT-363.

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  • ONSEMI
    • TRANSISTOR, RF BIPOLAR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:150mW; DC Collector Current:100mA; DC Current Gain hFE:290hFE; RF Transistor Case:SOT-323; No.

    TRANSISTOR, RF BIPOLAR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:150mW; DC Collector Current:100mA; DC Current Gain hFE:290hFE; RF Transistor Case:SOT-323; No.

    Onsemi Bc847Bwt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:BCxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Continuous Collector Current Ic:100mA; Gain Bandwidth ft Typ:100MHz; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Case Style:SC-70.

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  • ONSEMI
    • TRANSISTOR, RF BIPOLAR; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:200MHz; Power Dissipation Pd:300mW; DC Collector Current:-600mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR, RF BIPOLAR; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:200MHz; Power Dissipation Pd:300mW; DC Collector Current:-600mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbt4403Lt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Continuous Collector Current Ic:-600mA; Gain Bandwidth ft Typ:200MHz; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; RF Transistor Case:SOT-23; Termination Type:Surface Mount Device.

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  • ONSEMI
    • TRANSISTOR,NPNPNP,SOT363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:100hFE; RF Transistor Case:SOT-363; No.

    TRANSISTOR,NPNPNP,SOT363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:100hFE; RF Transistor Case:SOT-363; No.

    Onsemi Bc847Bpdw1T1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Continuous Collector Current Ic:100mA; Gain Bandwidth ft Typ:100MHz; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Case Style:SOT-363.

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  • ONSEMI
    • TRANSISTOR, RF BIPOLAR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:150mW; DC Collector Current:100mA; DC Current Gain hFE:290hFE; RF Transistor Case:SOT-323; No.

    TRANSISTOR, RF BIPOLAR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:150mW; DC Collector Current:100mA; DC Current Gain hFE:290hFE; RF Transistor Case:SOT-323; No.

    Onsemi Bc847Bwt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:BCxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Continuous Collector Current Ic:100mA; Gain Bandwidth ft Typ:100MHz; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Case Style:SC-70.

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  • ONSEMI
    • TRANSISTOR, RF BIPOLAR; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:200MHz; Power Dissipation Pd:300mW; DC Collector Current:-600mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR, RF BIPOLAR; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:200MHz; Power Dissipation Pd:300mW; DC Collector Current:-600mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbt4403Lt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Continuous Collector Current Ic:-600mA; Gain Bandwidth ft Typ:200MHz; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; RF Transistor Case:SOT-23; Termination Type:Surface Mount Device.

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  • ONSEMI
    • TRANSISTOR, RF BIPOLAR; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-300V; Transition Frequency ft:50MHz; Power Dissipation Pd:300mW; DC Collector Current:-500mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR, RF BIPOLAR; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-300V; Transition Frequency ft:50MHz; Power Dissipation Pd:300mW; DC Collector Current:-500mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbta92Lt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Continuous Collector Current Ic:-50mA; Gain Bandwidth ft Typ:50MHz; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; RF Transistor Case:SOT-23; Termination Type:Surface Mount Device; Transistor Type:Power RF.

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  • ONSEMI
    • INDUCTOR, 18NH, 5%, 0603, MULTILAYER; Inductance:18nH; Product Range:CI160808 Series; DC Current Rating:300mA; High Frequency Inductor Case:0603 [1608 Metric]; Inductor Construction:Multilayer; DC Resistance Max:0.5ohm; Inductance Tolerance:± 5%; Self Resonant Frequency Min:1.35GHz; SVHC:No SVHC (15-Jan-2018); Inductor Case Style:0603 [1608 Metric]
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  • BOURNS
    • INDUCTOR, 1MH, 10%, 1812, WIREWOUND; Inductance:1mH; Product Range:CM453232 Series; DC Current Rating:30mA; High Frequency Inductor Case:1812 [4532 Metric]; Inductor Construction:Wirewound; DC Resistance Max:40ohm; Inductance Tolerance:± 5%; Self Resonant Frequency Min:2.5MHz; SVHC:No SVHC (15-Jan-2018); Inductor Case Style:1812 [4532 Metric]
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  • BOURNS
    • INDUCTOR, CHOKE; Product Range:6000 Series; Inductance:220µH; DC Current Rating:1A; DC Resistance Max:0.65ohm; Inductance Tolerance:± 10%; Self Resonant Frequency Min:2.7MHz; SVHC:No SVHC (15-Jan-2018); Core Material:Ferrite; Inductor Case Style:Radial Leaded; Inductor Type:Choke; Lead Spacing:5mm; No.
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  • BOURNS JW MILLER
    • INDUCTOR, 18NH, 5%, 0603, MULTILAYER; Inductance:18nH; Product Range:CI160808 Series; DC Current Rating:300mA; High Frequency Inductor Case:0603 [1608 Metric]; Inductor Construction:Multilayer; DC Resistance Max:0.5ohm; Inductance Tolerance:± 5%; Self Resonant Frequency Min:1.35GHz; SVHC:No SVHC (15-Jan-2018); Inductor Case Style:0603 [1608 Metric]
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  • BOURNS
    • POWER INDUCTOR, 68UH, 20%, SMD, SHIELDED; Inductance:68µH; RMS Current (Irms):890mA; Inductor Construction:Shielded; Saturation Current (Isat):960mA; Product Range:DR Series; Power Inductor Case:7.6mm x 7.6mm x 3.55mm; DC Resistance Max:-; Inductance Tolerance:± 20%; SVHC:No SVHC (15-Jan-2019); Inductor Type:Power; No.
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  • EATON COILTRONICS
    • POWER INDUCTOR, 330UH, 20%, SMD; Inductance:330µH; RMS Current (Irms):450mA; Inductor Construction:Shielded; Saturation Current (Isat):540mA; Product Range:DR Series; Power Inductor Case:7.6mm x 7.6mm x 4.35mm; DC Resistance Max:-; Inductance Tolerance:± 20%; SVHC:No SVHC (15-Jan-2019); Inductor Type:Power; No.
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  • EATON COILTRONICS
    • INDUCTOR, POWER; Product Range:DRQ Series; Inductance, Parallel:10.47µH; RMS Current - Parallel:6.04A; Saturation Current - Parallel:11.2A; Coupled Inductor Case:12.5mm x 12.5mm x 8mm; DC Resistance Max - Parallel:0.0172ohm; SVHC:No SVHC (15-Jan-2019)
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  • Passive Components
  • EATON COILTRONICS
    • INDUCTOR, WIREWOUND; Inductance:100µH; Product Range:LB Series; DC Current Rating:45mA; High Frequency Inductor Case:0805 [2012 Metric]; Inductor Construction:Wirewound; DC Resistance Max:7ohm; Inductance Tolerance:± 10%; Self Resonant Frequency Min:8MHz; SVHC:No SVHC (15-Jan-2019); Inductor Case Style:0805 [2012 Metric]
  • Eletrônicos
  • Componentes e placas de circuitos
  • Componentes de circuito passivo
  • Indutores
  • Passive Components
  • TAIYO YUDEN
    • INDUCTOR, 1MH, 10%, 1812, WIREWOUND; Inductance:1mH; Product Range:CM453232 Series; DC Current Rating:30mA; High Frequency Inductor Case:1812 [4532 Metric]; Inductor Construction:Wirewound; DC Resistance Max:40ohm; Inductance Tolerance:± 5%; Self Resonant Frequency Min:2.5MHz; SVHC:No SVHC (15-Jan-2018); Inductor Case Style:1812 [4532 Metric]
  • Eletrônicos
  • Componentes e placas de circuitos
  • Componentes de circuito passivo
  • Indutores
  • Passive Components
  • BOURNS
    • TRANSISTOR, RF BIPOLAR; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-300V; Transition Frequency ft:50MHz; Power Dissipation Pd:300mW; DC Collector Current:-500mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR, RF BIPOLAR; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-300V; Transition Frequency ft:50MHz; Power Dissipation Pd:300mW; DC Collector Current:-500mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbta92Lt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Continuous Collector Current Ic:-50mA; Gain Bandwidth ft Typ:50MHz; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; RF Transistor Case:SOT-23; Termination Type:Surface Mount Device; Transistor Type:Power RF.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • POWER INDUCTOR, 68UH, 20%, SMD, SHIELDED; Inductance:68µH; RMS Current (Irms):890mA; Inductor Construction:Shielded; Saturation Current (Isat):960mA; Product Range:DR Series; Power Inductor Case:7.6mm x 7.6mm x 3.55mm; DC Resistance Max:-; Inductance Tolerance:± 20%; SVHC:No SVHC (15-Jan-2019); Inductor Type:Power; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Componentes de circuito passivo
  • Indutores
  • Passive Components
  • EATON COILTRONICS
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