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Nexperia Pemd10,115 Trans Npn/pnp 50V 0.1A Sot666

About The 1A SOT666; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.TRANS NPN/PNP 50V 0

TRANS NPN/PNP 50V 0.1A SOT666; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:4

Nexperia

Nexperia Pemd10,115 Trans Npn/pnp 50V 0.1A Sot666

More from TRANS NPN/PNP 50V 0.1A SOT666; Digital Transistor Polarity:NPN And PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:4 | Nexperia
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Specifications of Nexperia Pemd10,115 Trans Npn/pnp 50V 0.1A Sot666

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Nexperia Pemd10,115 Trans Npn/pnp 50V 0.1A Sot666
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Rating :- 9.89 /10
Votes :- 51
of Pins:3 Pin; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):150mV; Current Ic Continuous a Max:100mA; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Hfe Min:200; No.

of Pins:3 Pin; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):150mV; Current Ic Continuous a Max:100mA; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Hfe Min:200; No.

1A, SOT23; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:-; Resistor Ratio, R1 / R2:-; RF Transistor Case:SOT-23; No.1A, Sot23.of Pins:3Pins; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:250mW; Termination Type:Surface Mount Device; Transistor Case Style:SOT-23; Transistor Type:General Purpose TRANS, NPN, 50V, 0.

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    • of Pins:3 Pin; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):-150mV; Current Ic Continuous a Max:-10mA; DC Collector Current:-100mA; DC Current Gain hFE:30hFE; Hfe Min:30; No.
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    • TRANS PNP 100V 1A LOW SAT SOT89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:100MHz; Power Dissipation Pd:550mW; DC Collector Current:-1A; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-89; No.

    TRANS PNP 100V 1A LOW SAT SOT89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:100MHz; Power Dissipation Pd:550mW; DC Collector Current:-1A; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-89; No.

    Nexperia Pbss9110X,135 Trans Pnp 100V 1A Low Sat Sot89 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):-120mV; Current Ic Continuous a Max:-250mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:150; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Low Saturation (BISS).

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    • TRANS PNP 60V 1A LOW SAT SOT323; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:185MHz; Power Dissipation Pd:250mW; DC Collector Current:-1A; DC Current Gain hFE:350hFE; Transistor Case Style:SOT-323; No.

    TRANS PNP 60V 1A LOW SAT SOT323; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:185MHz; Power Dissipation Pd:250mW; DC Collector Current:-1A; DC Current Gain hFE:350hFE; Transistor Case Style:SOT-323; No.

    Nexperia Pbss5160U,115 Trans Pnp 60V 1A Low Sat Sot323 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):-175mV; Current Ic Continuous a Max:-100mA; Gain Bandwidth ft Typ:185MHz; Hfe Min:200; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Low Saturation (BISS).

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    • TRANS NPN/PNP 50V 0.1A SOT666; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:4
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    • of Pins:6 Pin; Product Range:PEMD12 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):150mV; Current Ic Continuous a Max:10mA; DC Collector Current:100mA; DC Current Gain hFE:80hFE; Hfe Min:80; No.
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    • TRANS NPN/PNP 50V 0.1A SOT666; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:4
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    • of Pins:6 Pin; Product Range:PEMB13 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):-100mV; Current Ic Continuous a Max:-5mA; DC Collector Current:-100mA; DC Current Gain hFE:100hFE; Hfe Min:100; No.
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    • TRANS NPN/PNP 50V 0.1A SOT666; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:4
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    • of Pins:6 Pin; Product Range:PEMB13 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):-100mV; Current Ic Continuous a Max:-5mA; DC Collector Current:-100mA; DC Current Gain hFE:100hFE; Hfe Min:100; No.

    of Pins:6 Pin; Product Range:PEMB13 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):-100mV; Current Ic Continuous a Max:-5mA; DC Collector Current:-100mA; DC Current Gain hFE:100hFE; Hfe Min:100; No.

    Nexperia Pemb13,115 Trans Pnp/pnp 50V 0.7kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:-; RF Transistor Case:SOT-666; No.of Pins:6Pins; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:300mW; Termination Type:Surface Mount Device; Transistor Case Style:SOT-666; Transistor Polarity:PNP; Transition Frequency ft:180MHz TRANS PNP/PNP 50V 0.1A Sot666.

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