MOSFET, N CH, TRENCH DL, 60V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.78ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:410mW; Transistor Case Style:SOT-363; No.
78ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.Nexperia Pmgd780Sn,115 Mosfet, N Ch, Trench Dl, 60V, Sot363 of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Continuous Drain Current Id, N Channel:490mA; Current Id Max:490mA; Drain Source Voltage Vds, N Channel:60V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.