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Nexperia Bsh201,215 Mosfet P-Ch 60V 300Ma Sot-23

About The MOSFET P-CH 60V 300MA SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-160mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):2.9V; Power Dissipation Pd:417mW; Transistor Case Style:SOT-23; No

MOSFET P-CH 60V 300MA SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-160mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):2.1ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.9V; Power Dissipation Pd:417mW; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Current Id Max:-300mA; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:-60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:1.9V

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Nexperia Bsh201,215 Mosfet P-Ch 60V 300Ma Sot-23

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Specifications of Nexperia Bsh201,215 Mosfet P-Ch 60V 300Ma Sot-23

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Nexperia Bsh201,215 Mosfet P-Ch 60V 300Ma Sot-23
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Votes :- 52
MOSFET P-CH 200V 225MA SOT223; Transistor Polarity:P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-200V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.8V; Power Dissipation Pd:1.5W; Transistor Case Style:SOT-223; No.

MOSFET P-CH 200V 225MA SOT223; Transistor Polarity:P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-200V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.8V; Power Dissipation Pd:1.5W; Transistor Case Style:SOT-223; No.

8V; Voltage Vgs Rds on Measurement:-10V.Nexperia Bsp220,115 Mosfet P-Ch 200V 225Ma Sot223 of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:-225mA; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:-200V; Voltage Vgs Max:-2.

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  • Nexperia
    • MOSFET, N CH, 250V, 375MA, SOT223; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:250V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.5W; Transistor Case Style:SOT-223; No.

    MOSFET, N CH, 250V, 375MA, SOT223; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:250V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.5W; Transistor Case Style:SOT-223; No.

    Nexperia Bsp126,115 Mosfet, N Ch, 250V, 375Ma, Sot223 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Current Id Max:375mA; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:250V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V.

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    • MOSFET, N CH, 200V, 0.55A, SOT223; Transistor Polarity:N Channel; Continuous Drain Current Id:750mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.5W; Transistor Case Style:SOT-223; No.

    MOSFET, N CH, 200V, 0.55A, SOT223; Transistor Polarity:N Channel; Continuous Drain Current Id:750mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.5W; Transistor Case Style:SOT-223; No.

    Nexperia Bsp122,115 Mosfet, N Ch, 200V, 0.55A, Sot223 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:550mA; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:200V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V.

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  • Nexperia
    • MOSFET P-CH 60V 300MA SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-160mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):2.1ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.9V; Power Dissipation Pd:417mW; Transistor Case Style:SOT-23; No.

    MOSFET P-CH 60V 300MA SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-160mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):2.1ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.9V; Power Dissipation Pd:417mW; Transistor Case Style:SOT-23; No.

    Nexperia Bsh201,215 Mosfet P-Ch 60V 300Ma Sot-23 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Current Id Max:-300mA; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:-60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:1.9V.

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    • MOSFET, N CH, 30V, 1.9A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.077ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:830mW; Transistor Case Style:SOT-23; No.

    MOSFET, N CH, 30V, 1.9A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.077ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:830mW; Transistor Case Style:SOT-23; No.

    5V; Voltage Vgs Rds on Measurement:10V.9A, Sot23 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:40V; Voltage Vgs Max:1.

  • Nexperia
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    • MOSFET, N CH, 20V, 1.05A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.05A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:570mV; Power Dissipation Pd:417mW; Transistor Case Style:SOT-23; No.

    MOSFET, N CH, 20V, 1.05A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.05A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:570mV; Power Dissipation Pd:417mW; Transistor Case Style:SOT-23; No.

    Nexperia Bsh105,215 Mosfet, N Ch, 20V, 1.5V.05A, Sot23 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:20V; Voltage Vgs Max:570mV; Voltage Vgs Rds on Measurement:4.

  • Nexperia
  • Nexperia
    • MOSFET P-CH 60V 300MA SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-160mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):2.1ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.9V; Power Dissipation Pd:417mW; Transistor Case Style:SOT-23; No.

    MOSFET P-CH 60V 300MA SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-160mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):2.1ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.9V; Power Dissipation Pd:417mW; Transistor Case Style:SOT-23; No.

    Nexperia Bsh201,215 Mosfet P-Ch 60V 300Ma Sot-23 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Current Id Max:-300mA; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:-60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:1.

  • Nexperia
  • Nexperia
    • MOSFET, N CH, 30V, 1.9A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.077ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:830mW; Transistor Case Style:SOT-23; No.

    MOSFET, N CH, 30V, 1.9A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.077ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:830mW; Transistor Case Style:SOT-23; No.

    5V; Voltage Vgs Rds on Measurement:10V.9A, Sot23 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:40V; Voltage Vgs Max:1.

  • Nexperia
  • Nexperia
    • MOSFET P-CH 60V 300MA SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-160mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):2.1ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.9V; Power Dissipation Pd:417mW; Transistor Case Style:SOT-23; No.

    MOSFET P-CH 60V 300MA SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-160mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):2.1ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.9V; Power Dissipation Pd:417mW; Transistor Case Style:SOT-23; No.

    Nexperia Bsh201,215 Mosfet P-Ch 60V 300Ma Sot-23 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Current Id Max:-300mA; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:-60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:1.

  • Nexperia
  • Nexperia
    • MOSFET, N CH, 30V, 1.9A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.077ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:830mW; Transistor Case Style:SOT-23; No.
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  • Nexperia