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Nexperia Pmgd280Un,115 Mosfet, N Ch, Trench Dl, 20V, Sot363

About The of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Continuous Drain Current Id, N Channel:870mA; Current Id Max:870mA; Drain Source Voltage Vds, N Channel:20V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.5V

of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Continuous Drain Current Id, N Channel:870mA; Current Id Max:870mA; Drain Source Voltage Vds, N Channel:20V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.28ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V MOSFET, N CH, TRENCH DL, 20V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power Dissipation Pd:400mW; Transistor Case Style:SOT-363; No.

Nexperia

Nexperia Pmgd280Un,115 Mosfet, N Ch, Trench Dl, 20V, Sot363

More from Of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Continuous Drain Current Id, N Channel:870mA; Current Id Max:870mA; Drain Source Voltage Vds, N Channel:20V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.28ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C To +150°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds On Measurement:4.5V: Nexperia
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Nexperia

Specifications of Nexperia Pmgd280Un,115 Mosfet, N Ch, Trench Dl, 20V, Sot363

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Nexperia Pmgd280Un,115 Mosfet, N Ch, Trench Dl, 20V, Sot363
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Rating :- 9.8 /10
Votes :- 54
MOSFET, N CH, TRENCH DL, 60V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.78ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:410mW; Transistor Case Style:SOT-363; No.

MOSFET, N CH, TRENCH DL, 60V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.78ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:410mW; Transistor Case Style:SOT-363; No.

78ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.Nexperia Pmgd780Sn,115 Mosfet, N Ch, Trench Dl, 60V, Sot363 of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Continuous Drain Current Id, N Channel:490mA; Current Id Max:490mA; Drain Source Voltage Vds, N Channel:60V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.

  • Nexperia
  • Nexperia
    • DISSIPATIVE MAT, 1.2M X 550MM; Mat Type:Dissipative Mat; Mat Colour:Black; Mat Material:PE (Polyethylene); Ground Terminal Type:4 10mm Studs; Width - Imperial:3.9ft; Length - Imperial:1.8ft; Width - Metric:1.2m; Length - Metric:550mm; Product Range:-; SVHC:No SVHC (17-Dec-2015); Colour:Black; External Depth:1.2m; External Length / Height:1.5mm; External Width:0.55m; Ground Terminals:Stud; Height:1.5mm; Length:1200mm; Mat Features:Shelf Liner, Chemical Resistant; Material:Conductive EVA; Stud Size:10mm; Surface Resistivity Max:0.1Mohm/sq; Thickness:1.5mm; Thickness:1.5mm
  • Desco Europe,Vermason
  • Desco Europe / Vermason
    • MOSFET, N CH, TRENCH DL, 20V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.29ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:410mW; Transistor Case Style:SOT-363; No.

    MOSFET, N CH, TRENCH DL, 20V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.29ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:410mW; Transistor Case Style:SOT-363; No.

    5V.Nexperia Pmgd290Xn,115 Mosfet, N Ch, Trench Dl, 20V, Sot363 of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Continuous Drain Current Id, N Channel:560mA; Current Id Max:860mA; Drain Source Voltage Vds, N Channel:20V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.

  • Nexperia
  • Nexperia
    • MOSFET, N CH, TRENCH DL, 20V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power Dissipation Pd:400mW; Transistor Case Style:SOT-363; No.

    MOSFET, N CH, TRENCH DL, 20V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power Dissipation Pd:400mW; Transistor Case Style:SOT-363; No.

    Nexperia Pmgd280Un,115 Mosfet, N Ch, Trench Dl, 20V, Sot363 of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Continuous Drain Current Id, N Channel:870mA; Current Id Max:870mA; Drain Source Voltage Vds, N Channel:20V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.5V.28ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.

  • Nexperia
  • Nexperia
    • MOSFET, N CH, 100V, 6.5A, SOT223; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:8.3W; Transistor Case Style:SOT-223; No.
  • Nexperia
  • Nexperia
    • MOSFET, N CH, TRENCH DL, 20V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.29ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:410mW; Transistor Case Style:SOT-363; No.

    MOSFET, N CH, TRENCH DL, 20V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.29ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:410mW; Transistor Case Style:SOT-363; No.

    29ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.

  • Nexperia
  • Nexperia
    • MOSFET, N CH, TRENCH DL, 20V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power Dissipation Pd:400mW; Transistor Case Style:SOT-363; No.

    MOSFET, N CH, TRENCH DL, 20V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power Dissipation Pd:400mW; Transistor Case Style:SOT-363; No.

    28ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.

  • Nexperia
  • Nexperia
    • MOSFET P-CH 240V 0.2A SOT89; Transistor Polarity:P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-240V; On Resistance Rds(on):12ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.8V; Power Dissipation Pd:1W; Transistor Case Style:SOT-89; No.

    MOSFET P-CH 240V 0.2A SOT89; Transistor Polarity:P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-240V; On Resistance Rds(on):12ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.8V; Power Dissipation Pd:1W; Transistor Case Style:SOT-89; No.

    8V; Voltage Vgs Rds on Measurement:-10V.2A Sot89 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:-200mA; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:-240V; Voltage Vgs Max:-2.Nexperia Bss192,115 Mosfet P-Ch 240V 0.

  • Nexperia
  • Nexperia
    • MOSFET, N CH, TRENCH DL, 20V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power Dissipation Pd:400mW; Transistor Case Style:SOT-363; No.

    MOSFET, N CH, TRENCH DL, 20V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power Dissipation Pd:400mW; Transistor Case Style:SOT-363; No.

    28ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V.Nexperia Pmgd280Un,115 Mosfet, N Ch, Trench Dl, 20V, Sot363 of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Continuous Drain Current Id, N Channel:870mA; Current Id Max:870mA; Drain Source Voltage Vds, N Channel:20V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.

  • Nexperia
  • Nexperia
    • MOSFET P-CH 240V 0.2A SOT89; Transistor Polarity:P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-240V; On Resistance Rds(on):12ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.8V; Power Dissipation Pd:1W; Transistor Case Style:SOT-89; No.

    MOSFET P-CH 240V 0.2A SOT89; Transistor Polarity:P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-240V; On Resistance Rds(on):12ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.8V; Power Dissipation Pd:1W; Transistor Case Style:SOT-89; No.

    8V; Voltage Vgs Rds on Measurement:-10V.2A Sot89 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:-200mA; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:-240V; Voltage Vgs Max:-2.Nexperia Bss192,115 Mosfet P-Ch 240V 0.

  • Nexperia
  • Nexperia