of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:1.3W; SMD Marking:BCP51; Termination Type:Surface Mount Device; Voltage Vcbo:45V TRANSISTOR, PNP, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:145MHz; Power Dissipation Pd:650mW; DC Collector Current:1A; DC Current Gain hFE:63hFE; Transistor Case Style:SOT-223; No. Nexperia Bcp51,115 Transistor, Pnp, Sot-223.
3W; SMD Marking:BCP51/16; Termination Type:Surface Mount Device; Voltage Vcbo:45V TRANSISTOR, PNP, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:145MHz; Power Dissipation Pd:650mW; DC Collector Current:1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-223; No. Nexperia Bcp51-16,115 Transistor, Pnp, Sot-223.
5W; SMD Marking:BCP53; Termination Type:Surface Mount Device; Voltage Vcbo:100V TRANSISTOR, PNP, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:145MHz; Power Dissipation Pd:650mW; DC Collector Current:1A; DC Current Gain hFE:63hFE; Transistor Case Style:SOT-223; No. Nexperia Bcp53,115 Transistor, Pnp, Sot-223.of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:1.
3W; SMD Marking:BCP51; Termination Type:Surface Mount Device; Voltage Vcbo:45V TRANSISTOR, PNP, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:145MHz; Power Dissipation Pd:650mW; DC Collector Current:1A; DC Current Gain hFE:63hFE; Transistor Case Style:SOT-223; No. Nexperia Bcp51,115 Transistor, Pnp, Sot-223.of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:1.
3W; SMD Marking:BCP51/16; Termination Type:Surface Mount Device; Voltage Vcbo:45V TRANSISTOR, PNP, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:145MHz; Power Dissipation Pd:650mW; DC Collector Current:1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-223; No.of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:1. Nexperia Bcp51-16,115 Transistor, Pnp, Sot-223.
Nexperia Bc860C,215 Transistor, Pnp, 45V, Sot-23.of Transistors:1; Noise Factor Max:3dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:4G; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, PNP, 45V, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:420hFE; Transistor Case Style:SOT-23; No.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:1.5W; SMD Marking:BCP53; Termination Type:Surface Mount Device; Voltage Vcbo:100V TRANSISTOR, PNP, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:145MHz; Power Dissipation Pd:650mW; DC Collector Current:1A; DC Current Gain hFE:63hFE; Transistor Case Style:SOT-223; No. Nexperia Bcp53,115 Transistor, Pnp, Sot-223.
3W; SMD Marking:BCP53/16; Termination Type:Surface Mount Device; Voltage Vcbo:100V TRANSISTOR, PNP, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:145MHz; Power Dissipation Pd:650mW; DC Collector Current:-1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-223; No.
Nexperia Bcp54,115 Transistor, Npn, Sot-223.2W; SMD Marking:BCP54; Termination Type:Surface Mount Device; Voltage Vcbo:45V TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:180MHz; Power Dissipation Pd:640mW; DC Collector Current:1A; DC Current Gain hFE:63hFE; Transistor Case Style:SOT-223; No.
Nexperia Bcp56,115 Transistor, Npn, Sot-223.of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:650mW; SMD Marking:BCP56; Termination Type:Surface Mount Device; Voltage Vcbo:100V TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:180MHz; Power Dissipation Pd:650mW; DC Collector Current:1A; DC Current Gain hFE:63hFE; Transistor Case Style:SOT-223; No.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:650mW; SMD Marking:BCP56/16; Termination Type:Surface Mount Device; Voltage Vcbo:100V TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:180MHz; Power Dissipation Pd:650mW; DC Collector Current:1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-223; No. Nexperia Bcp56-16,115 Transistor, Npn, Sot-223.
2W; SMD Marking:BCP54; Termination Type:Surface Mount Device; Voltage Vcbo:45V TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:180MHz; Power Dissipation Pd:640mW; DC Collector Current:1A; DC Current Gain hFE:63hFE; Transistor Case Style:SOT-223; No. Nexperia Bcp54,115 Transistor, Npn, Sot-223.of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:1.
Nexperia Bcp56,115 Transistor, Npn, Sot-223.of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:650mW; SMD Marking:BCP56; Termination Type:Surface Mount Device; Voltage Vcbo:100V TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:180MHz; Power Dissipation Pd:650mW; DC Collector Current:1A; DC Current Gain hFE:63hFE; Transistor Case Style:SOT-223; No.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:650mW; SMD Marking:BCP56/16; Termination Type:Surface Mount Device; Voltage Vcbo:100V TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:180MHz; Power Dissipation Pd:650mW; DC Collector Current:1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-223; No. Nexperia Bcp56-16,115 Transistor, Npn, Sot-223.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:1W; SMD Marking:BCP69; Termination Type:Surface Mount Device; Voltage Vcbo:32V TRANSISTOR, PNP, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-20V; Transition Frequency ft:140MHz; Power Dissipation Pd:650mW; DC Collector Current:-2A; DC Current Gain hFE:85hFE; Transistor Case Style:SOT-223; No. Nexperia Bcp69,115 Transistor, Pnp, Sot-223.
Nexperia Bcp69,115 Transistor, Pnp, Sot-223.of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:1W; SMD Marking:BCP69; Termination Type:Surface Mount Device; Voltage Vcbo:32V TRANSISTOR, PNP, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-20V; Transition Frequency ft:140MHz; Power Dissipation Pd:650mW; DC Collector Current:-2A; DC Current Gain hFE:85hFE; Transistor Case Style:SOT-223; No.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:FG*; Termination Type:Surface Mount Device; Transistor Type:Darlington; Voltage Vcbo:80V DARLINGTON TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:220MHz; Power Dissipation Pd:250mW; DC Collector Current:500mA; DC Current Gain hFE:10000hFE; Transistor Case Style:SOT-23; No. Nexperia Bcv47,215 Darlington Transistor, Npn, Sot-23.
of Transistors:2; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:3*P; Transition Frequency ft:100MHz; Voltage Vcbo:30V TRANSISTOR, DUAL, PNP, SOT-143B; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:220hFE; Transistor Case Style:SOT-143B; No. Nexperia Bcv62B,215 Transistor, Dual, Pnp, Sot-143B.
of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:C2; Termination Type:Surface Mount Device; Voltage Vcbo:32V TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:32V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-23; No. Nexperia Bcw30,215 Transistor, Pnp, Sot-23.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:FG*; Termination Type:Surface Mount Device; Transistor Type:Darlington; Voltage Vcbo:80V DARLINGTON TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:220MHz; Power Dissipation Pd:250mW; DC Collector Current:500mA; DC Current Gain hFE:10000hFE; Transistor Case Style:SOT-23; No. Nexperia Bcv47,215 Darlington Transistor, Npn, Sot-23.
Nexperia Bcv62B,215 Transistor, Dual, Pnp, Sot-143B.of Transistors:2; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:3*P; Transition Frequency ft:100MHz; Voltage Vcbo:30V TRANSISTOR, DUAL, PNP, SOT-143B; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:220hFE; Transistor Case Style:SOT-143B; No.
Nexperia Bcw30,215 Transistor, Pnp, Sot-23.of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:C2; Termination Type:Surface Mount Device; Voltage Vcbo:32V TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:32V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-23; No.
of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:D2; Termination Type:Surface Mount Device; Voltage Vcbo:32V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:32V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:330hFE; Transistor Case Style:SOT-23; No. Nexperia Bcw32,215 Transistor, Npn, Sot-23.
Nexperia Bcw33,215 Transistor, Npn, Sot-23.of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:D3; Termination Type:Surface Mount Device; Voltage Vcbo:32V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:32V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:600hFE; Transistor Case Style:SOT-23; No.
Nexperia Bcw60D,215 Transistor, Npn, Sot-23.of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:AD; Termination Type:Surface Mount Device; Voltage Vcbo:32V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:32V; Transition Frequency ft:250MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:380hFE; Transistor Case Style:SOT-23; No.
of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:H2; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-23; No. Nexperia Bcw70,215 Transistor, Pnp, Sot-23.
of Transistors:1; Noise Factor Max:10dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:K1; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:90hFE; Transistor Case Style:SOT-23; No. Nexperia Bcw71,215 Transistor, Npn, Sot-23.