Vishay Irfd220Pbf of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Current Id Max:800mA; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:6.4A; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.
62mm; Voltage Vds Typ:50V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V MOSFET, N, DIL; Transistor Polarity:N Channel; Continuous Drain Current Id:2. Vishay Irfd020Pbf.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:1W; Transistor Case Style:DIP; No.
of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:39A; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V MOSFET, N, FULLPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.
Vishay Irld014Pbf of Pins:4Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Current Temperature:25°C; Full Power Rating Temperature:25°C; Operating Temperature Min:-55°C; Pulse Current Idm:14A; Voltage Vgs Max:10V.
3A; Current Temperature:25°C; Device Marking:IRLD120PBF; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:10A; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V.Vishay Irld120Pbf of Pins:4Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Current Id Max:1.
of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:31A; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V MOSFET, N, LOGIC, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9. Vishay Irl520Pbf.27ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Power Dissipation Pd:60W; Transistor Case Style:TO-220AB; No.
of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:110A; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V MOSFET, N, LOGIC, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0. Vishay Irl540Pbf.
6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0. Vishay Irl510Pbf.of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:18A; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V MOSFET, N, LOGIC, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:5.54ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Power Dissipation Pd:43W; Transistor Case Style:TO-220AB; No.
3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:400mW; Transistor Case Style:SOT-23; No.3A; SMD Marking:1B; Tape Width:8mm; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:7. Infineon Irlml2803Trpbf.
5V; Threshold Voltage Vgs:700mV; Power Dissipation Pd:540mW; Transistor Case Style:SOT-23; No.5V; Voltage Vgs th Min:700mV MOSFET, N, LOGIC, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.25ohm; Rds(on) Test Voltage Vgs:4.
012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:130W; Transistor Case Style:TO-247AC; No. Infineon Irfp054Npbf.of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:290A; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.
25W; Transistor Case Style:SOT-23; No.045ohm; Rds(on) Test Voltage Vgs:4.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.2V; Power Dissipation Pd:1.
Vishay Irf9640Spbf.PCB:3W; Pulse Current Idm:44A; SMD Marking:IRF9640S; Voltage Vds:200V; Voltage Vds Typ:-200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-4V MOSFET, P, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:125W; Transistor Case Style:TO-263; No.
62mm; Voltage Vds Typ:-60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V MOSFET, P, DIL; Transistor Polarity:P Channel; Continuous Drain Current Id:1.28ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:1.
3W; Transistor Case Style:DIP; No.of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:5.62mm; Voltage Vds Typ:-100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V MOSFET, P, DIL; Transistor Polarity:P Channel; Continuous Drain Current Id:700mA; Drain Source Voltage Vds:-100V; On Resistance Rds(on):1.6A; Row Pitch:7.
Vishay Irfd9120Pbf.62mm; Voltage Vds Typ:-100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V MOSFET, P, DIL; Transistor Polarity:P Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.3W; Transistor Case Style:DIP; No.of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:8A; Row Pitch:7.
065ohm; Rds(on) Test Voltage Vgs:-4. Infineon Irlml6402Trpbf.5V; Threshold Voltage Vgs:-550mV; Power Dissipation Pd:1.of Transistors:1; Operating Temperature Min:-55°C; P Channel Gate Charge:12nC; Pulse Current Idm:22A; Reverse Recovery Time trr Typ:29ns; Rise Time:48ns; SMD Marking:1E; Tape Width:8mm MOSFET,P CH,-20V,-3.
6ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1.5V; Power Dissipation Pd:400mW; Transistor Case Style:SOT-23; No.4V MOSFET, P, LOGIC, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.
5V MOSFET,P CH,-30V,-3A,SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:-24A; SMD Marking:H; Tape Width:8mm; Voltage Vds Typ:-30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-2.25W; Transistor Case Style:SOT-23; No.098ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.