Diodes Inc.of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:2W; Pulse Current Idm:8A; SMD Marking:ZVN4206; Tape Width:12mm; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V MOSFET, N, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:2W; Transistor Case Style:SOT-223; No. Zvn4206G.
of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:2W; SMD Marking:FZT705; Transistor Type:Darlington; Voltage Vcbo:140V DARLINGTON TRANSISTOR, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:120V; Transition Frequency ft:160MHz; Power Dissipation Pd:2W; DC Collector Current:-2A; DC Current Gain hFE:3000hFE; Transistor Case Style:SOT-223; No.
Diodes Inc. Fmmt617.of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:625mW; SMD Marking:617; Tape Width:8mm; Turn Off Time:160ns; Turn On Time:120ns; Voltage Vcbo:15V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:120MHz; Power Dissipation Pd:625mW; DC Collector Current:3A; DC Current Gain hFE:450hFE; Transistor Case Style:SOT-23; No.
Fmmt619. Diodes Inc.of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:625mW; SMD Marking:619; Tape Width:8mm; Turn Off Time:750ns; Turn On Time:170ns; Voltage Vcbo:50V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:140MHz; Power Dissipation Pd:625mW; DC Collector Current:2A; DC Current Gain hFE:450hFE; Transistor Case Style:SOT-23; No.
Diodes Inc.of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:625mW; SMD Marking:717; Tape Width:8mm; Turn Off Time:130ns; Turn On Time:70ns; Voltage Vcbo:12V TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:110MHz; Power Dissipation Pd:625mW; DC Collector Current:-2.5A; DC Current Gain hFE:475hFE; Transistor Case Style:SOT-23; No.
of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:625mW; SMD Marking:617; Tape Width:8mm; Turn Off Time:160ns; Turn On Time:120ns; Voltage Vcbo:15V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:120MHz; Power Dissipation Pd:625mW; DC Collector Current:3A; DC Current Gain hFE:450hFE; Transistor Case Style:SOT-23; No. Fmmt617. Diodes Inc.
12mm; External Width:3.05mm; Forward Voltage:350mV; Junction Temperature Tj Max:125°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +125°C; Reverse Recovery Time trr Max:5ns; SMD Marking:L42.
Bat54Sta of Pins:3Pins; Product Range:BAT54 Series; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Common Connection:Anode / Cathode; Current If @ Vf:10mA; Current Ifsm:600mA; Diode Type:Schottky; External Depth:2.Diodes Inc.
Fmmt718.of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:625mW; SMD Marking:718; Tape Width:8mm; Turn Off Time:670ns; Turn On Time:40ns; Voltage Vcbo:20V TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency ft:180MHz; Power Dissipation Pd:625mW; DC Collector Current:-1. Diodes Inc.
5A; DC Current Gain hFE:475hFE; Transistor Case Style:SOT-23; No.of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:625mW; SMD Marking:720; Tape Width:8mm; Turn Off Time:435ns; Turn On Time:40ns; Voltage Vcbo:40V TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:190MHz; Power Dissipation Pd:625mW; DC Collector Current:-1. Fmmt720.
Bat54Ata of Pins:3Pins; Product Range:BAT54 Series; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019); Common Connection:Anode; Current If @ Vf:10mA; Current Ifsm:600mA; Diode Type:Schottky; External Depth:2.12mm; External Width:3.05mm; Forward Voltage:350mV; Junction Temperature Tj Max:125°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +125°C; Reverse Recovery Time trr Max:5ns; SMD Marking:L42.Diodes Inc.
of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:625mW; SMD Marking:718; Tape Width:8mm; Turn Off Time:670ns; Turn On Time:40ns; Voltage Vcbo:20V TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency ft:180MHz; Power Dissipation Pd:625mW; DC Collector Current:-1.
Diodes Inc. Ztx1051A.of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +200°C; Power Dissipation Ptot Max:1W; Pulsed Current Icm:10A; Voltage Vcbo:150V TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:155MHz; Power Dissipation Pd:1W; DC Collector Current:4A; DC Current Gain hFE:450hFE; Transistor Case Style:E-Line; No.
of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:2W; Pulsed Current Icm:8A; SMD Marking:FZT649; Voltage Vcbo:35V TRANSISTOR, PNP, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-25V; Transition Frequency ft:160MHz; Power Dissipation Pd:2W; DC Collector Current:3A; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-223; No. Diodes Inc. Fzt749.
of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:3W; Pulsed Current Icm:20A; SMD Marking:FZT849; Voltage Vcbo:80V TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:100MHz; Power Dissipation Pd:3W; DC Collector Current:7A; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-223; No. Fzt849. Diodes Inc.
of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:2W; Pulsed Current Icm:8A; SMD Marking:FZT649; Voltage Vcbo:35V TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency ft:240MHz; Power Dissipation Pd:2W; DC Collector Current:3A; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-223; No. Diodes Inc. Fzt649.
of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:3W; Pulsed Current Icm:20A; SMD Marking:FZT849; Voltage Vcbo:80V TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:100MHz; Power Dissipation Pd:3W; DC Collector Current:7A; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-223; No.