of Transistors:1; Power Dissipation Ptot Max:65W; Termination Type:Through Hole; Voltage Vcbo:80V TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:3MHz; Power Dissipation Pd:65W; DC Collector Current:6A; DC Current Gain hFE:15hFE; Transistor Case Style:TO-220; No. Multicomp Pro Bd243C.
Multicomp Pro Tip107 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Av Current Ic:8A; Collector Emitter Saturation Voltage Vce(on):2V; Continuous Collector Current Ic Max:8A; Current Ic Continuous a Max:8A; Current Ic hFE:3A; Hfe Min:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:80W; Termination Type:Through Hole; Transistor Type:Darlington; Voltage Vcbo:100V; Voltage Vceo Max:100V.
Multicomp Pro Bc847B.of Transistors:1; Noise Factor Max:10dB; Power Dissipation Ptot Max:200mW; SMD Marking:1Fp; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, 45V, 100MA, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:125hFE; Transistor Case Style:SOT-23; No.
of Transistors:1; Noise Factor Max:10dB; Power Dissipation Ptot Max:250mW; SMD Marking:1G; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:125hFE; Transistor Case Style:SOT-23; No. Multicomp Pro Bc847C.
Multicomp Pro Bc858C.of Transistors:1; Noise Factor Max:10dB; Power Dissipation Ptot Max:350mW; SMD Marking:3L; Termination Type:Surface Mount Device; Voltage Vcbo:30V TRANSISTOR,PNP,SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:420hFE; Transistor Case Style:SOT-23; No.
Multicomp Pro Tip41C.of Transistors:1; Power Dissipation Ptot Max:65W; Termination Type:Through Hole; Voltage Vcbo:100V TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:3MHz; Power Dissipation Pd:65W; DC Collector Current:6A; DC Current Gain hFE:15hFE; Transistor Case Style:TO-220; No.
Multicomp Pro Bc847B.of Transistors:1; Noise Factor Max:10dB; Power Dissipation Ptot Max:200mW; SMD Marking:1Fp; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, 45V, 100MA, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:125hFE; Transistor Case Style:SOT-23; No.
of Transistors:1; Noise Factor Max:10dB; Power Dissipation Ptot Max:250mW; SMD Marking:1G; Termination Type:Surface Mount Device; Voltage Vcbo:50V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:125hFE; Transistor Case Style:SOT-23; No. Multicomp Pro Bc847C.
Multicomp Pro Bc858C.of Transistors:1; Noise Factor Max:10dB; Power Dissipation Ptot Max:350mW; SMD Marking:3L; Termination Type:Surface Mount Device; Voltage Vcbo:30V TRANSISTOR,PNP,SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:420hFE; Transistor Case Style:SOT-23; No.