Infineon Ikd06N60Ratma1

Rating :- 9.94 /10

Votes :- 53

IGBT+ DIODE,1200V,25A,TO247; DC Collector Current:25A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:326W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No.

Infineon Ikw25N120H3Fksa1 of Pins:3Pins; Operating Temperature Max:175Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40Â°C; Operating Temperature Range:-40Â°C to +175Â°C; Power Dissipation Max:326W; Transistor Type:IGBT.

IGBT+ DIODE,1200V,15A,TO247; DC Collector Current:15A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:254W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No.

Infineon Ihw15N120R3Fksa1 of Pins:3Pins; Operating Temperature Max:175Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40Â°C; Operating Temperature Range:-40Â°C to +175Â°C; Power Dissipation Max:254W; Transistor Type:IGBT.

IGBT,1200V,40A,TO247; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:483W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No.

Infineon Igw40N120H3Fksa1 of Pins:3Pins; Operating Temperature Max:175Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40Â°C; Operating Temperature Range:-40Â°C to +175Â°C; Power Dissipation Max:483W; Transistor Type:IGBT.

IGBT+ DIODE,600V,40A,TO247; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:306W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No.

Infineon Ikw40N60H3Fksa1 of Pins:3Pins; Operating Temperature Max:175Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40Â°C; Operating Temperature Range:-40Â°C to +175Â°C; Power Dissipation Max:306W; Transistor Type:IGBT.

IGBT+ DIODE,600V,40A,TO247; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:306W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No.