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INFINEON

Infineon Ikw30N60H3Fksa1

About The of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +175°C; Power Dissipation Max:187W; Transistor Type:IGBT.4V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No

IGBT+ DIODE,600V,20A,TO247; DC Collector Current:30A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +175°C; Power Dissipation Max:187W; Transistor Type:IGBT

Semiconductors - Discretes

Infineon Ikw30N60H3Fksa1

Semiconductors - Discretes

Specifications of Infineon Ikw30N60H3Fksa1

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Infineon Ikw30N60H3Fksa1
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Votes :- 50
IGBT,600V,50A,TO220; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:333W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No.

IGBT,600V,50A,TO220; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:333W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No.

Infineon Igp50N60Txksa1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +175°C; Power Dissipation Max:333W; Transistor Type:IGBT.

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  • INFINEON
    • IGBT,600V,10A,TO263; DC Collector Current:10A; Collector Emitter Saturation Voltage Vce(on):2.05V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-263; No.

    IGBT,600V,10A,TO263; DC Collector Current:10A; Collector Emitter Saturation Voltage Vce(on):2.05V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-263; No.

    Infineon Igb10N60Tatma1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +175°C; Power Dissipation Max:110W; Transistor Type:IGBT.

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  • INFINEON
    • IGBT+ DIODE,1200V,40A,TO247; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:483W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No.

    IGBT+ DIODE,1200V,40A,TO247; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:483W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No.

    Infineon Ikw40N120H3Fksa1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +175°C; Power Dissipation Max:483W; Transistor Type:IGBT.

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  • INFINEON
    • IGBT+ DIODE,1200V,25A,TO247; DC Collector Current:25A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:326W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No.

    IGBT+ DIODE,1200V,25A,TO247; DC Collector Current:25A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:326W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No.

    Infineon Ikw25N120H3Fksa1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +175°C; Power Dissipation Max:326W; Transistor Type:IGBT.

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  • INFINEON
    • IGBT+ DIODE,1200V,15A,TO247; DC Collector Current:15A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:254W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No.

    IGBT+ DIODE,1200V,15A,TO247; DC Collector Current:15A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:254W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No.

    Infineon Ihw15N120R3Fksa1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +175°C; Power Dissipation Max:254W; Transistor Type:IGBT.

  • Eletrônicos
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  • INFINEON
    • IGBT,1200V,40A,TO247; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:483W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No.

    IGBT,1200V,40A,TO247; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:483W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No.

    Infineon Igw40N120H3Fksa1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +175°C; Power Dissipation Max:483W; Transistor Type:IGBT.

  • Eletrônicos
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  • Semiconductors - Discretes
  • INFINEON
    • IGBT+ DIODE,600V,40A,TO247; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:306W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No.

    IGBT+ DIODE,600V,40A,TO247; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:306W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No.

    Infineon Ikw40N60H3Fksa1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +175°C; Power Dissipation Max:306W; Transistor Type:IGBT.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • IGBT+ DIODE,600V,20A,TO247; DC Collector Current:30A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No.

    IGBT+ DIODE,600V,20A,TO247; DC Collector Current:30A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No.

    Infineon Ikw30N60H3Fksa1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +175°C; Power Dissipation Max:187W; Transistor Type:IGBT.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • IGBT+ DIODE,600V,40A,TO247; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:306W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No.

    IGBT+ DIODE,600V,40A,TO247; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:306W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No.

    Infineon Ikw40N60H3Fksa1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +175°C; Power Dissipation Max:306W; Transistor Type:IGBT.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • IGBT+ DIODE,600V,20A,TO247; DC Collector Current:30A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No.

    IGBT+ DIODE,600V,20A,TO247; DC Collector Current:30A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No.

    Infineon Ikw30N60H3Fksa1 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +175°C; Power Dissipation Max:187W; Transistor Type:IGBT.

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  • INFINEON