IGBT+ DIODE,600V,40A,TO247; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:306W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +175°C; Power Dissipation Max:306W; Transistor Type:IGBT
Semiconductors - Discretes
Infineon Ikw40N60H3Fksa1
Specifications of Infineon Ikw40N60H3Fksa1 | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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