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Semiconductors - Discretes
INFINEON

Infineon Bas21E6327Htsa1

About The 25V; Junction Temperature Tj Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Peak Forward Current:250mA; Power Dissipation Ptot Max:350mW; Reverse Voltage Vr Max:200V; SMD Marking:JSs; Termination Type:Surface Mount Device; Vr Ir Measurement Voltage:200V. of Pins:3Pins; Product Range:BAS21 Series; Automotive Qualification Standard:AEC-Q101; SVHC:No SVHC (27-Jun-2018); Application Code:High Voltage; Breakdown Voltage:250V; Current If @ Vf:100mA; Current Ifsm:4A; Current Ir Max:100µA; Forward Voltage:1

DIODE, HIGH VOLTAGE, SOT-23; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):250mA; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:50ns; Forward Surge Current Ifsm Max:1A; Operating Temperature Max:150°C; Diode Case Style:SOT-23; No. of Pins:3Pins; Product Range:BAS21 Series; Automotive Qualification Standard:AEC-Q101; SVHC:No SVHC (27-Jun-2018); Application Code:High Voltage; Breakdown Voltage:250V; Current If @ Vf:100mA; Current Ifsm:4A; Current Ir Max:100µA; Forward Voltage:1.25V; Junction Temperature Tj Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Peak Forward Current:250mA; Power Dissipation Ptot Max:350mW; Reverse Voltage Vr Max:200V; SMD Marking:JSs; Termination Type:Surface Mount Device; Vr Ir Measurement Voltage:200V

Semiconductors - Discretes

Infineon Bas21E6327Htsa1

Semiconductors - Discretes

Specifications of Infineon Bas21E6327Htsa1

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Infineon Bas21E6327Htsa1
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