Diodes Inc. Bss8402Dw-7-F

Rating :- 9.95 /10

Votes :- 49

BIPOLAR, TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:150MHz; Power Dissipation Pd:600mW; DC Collector Current:1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.

Dnbt8105-7 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on):250mV; Current Ic Continuous a Max:1A; Gain Bandwidth ft Typ:150MHz; Hfe Min:100; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device.Diodes Inc.

BIPOLAR, TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:50MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:30hFE; Transistor Case Style:SOT-23; No.

Dn350T05-7 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on):300mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:50MHz; Hfe Min:30; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device; Transistor Type:Small Signal.

MOSFET, N CH, 20V, 0.54A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:540mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.55ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:350mW; Transistor Case Style:SOT-23; No.

5V.Diodes Inc.

MOSFET, N CH, 50V, 0.3A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:; Available until stocks are exhausted

Dmn5L06K-7.Diodes Inc.

MOSFET, N CH, 20V, 0.54A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:540mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.55ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:350mW; Transistor Case Style:SOT-23; No.

Dmn2004K-7 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Current Id Max:540mA; Operating Temperature Min:-65Â°C; Operating Temperature Range:-65Â°C to +150Â°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.Diodes Inc.

MOSFET P-CHANNEL SOT-323; Transistor Polarity:P Channel; Continuous Drain Current Id:-130mA; Drain Source Voltage Vds:-50V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:-5V; Threshold Voltage Vgs:-1.6V; Power Dissipation Pd:200mW; Transistor Case Style:SOT-323; No.

Bss84W-7-F of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Current Id Max:-130mA; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:-50V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-5V.Diodes Inc.

MOSFET P-CHANNEL SOT-363; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-130mA; Drain Source Voltage Vds:-50V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:-5V; Threshold Voltage Vgs:-1.6V; Power Dissipation Pd:300mW; Transistor Case Style:SOT-363; No.

Bss84Dw-7-F of Pins:6Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Continuous Drain Current Id, P Channel:-130mA; Current Id Max:-130mA; Drain Source Voltage Vds, P Channel:-50V; Module Configuration:Dual; On Resistance Rds(on), P Channel:6ohm; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:-50V; Voltage Vgs Rds on Measurement:-5V.Diodes Inc.

MOSFET, NP, CH, 60V, SOT-363; Transistor Polarity:N and P Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):13.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:200mW; Transistor Case Style:SOT-363; No.

Diodes Inc.2ohm; On Resistance Rds(on), P Channel:10ohm; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:60V; Voltage Vgs Rds on Measurement:10V. Bss8402Dw-7-F of Pins:6Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Continuous Drain Current Id, N Channel:115mA; Continuous Drain Current Id, P Channel:-130mA; Current Id Max:800mA; Drain Source Voltage Vds, N Channel:60V; Drain Source Voltage Vds, P Channel:-50V; Module Configuration:Dual; On Resistance Rds(on), N Channel:3.

MOSFET P-CHANNEL SOT-363; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-130mA; Drain Source Voltage Vds:-50V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:-5V; Threshold Voltage Vgs:-1.6V; Power Dissipation Pd:300mW; Transistor Case Style:SOT-363; No.

Diodes Inc. Bss84Dw-7-F of Pins:6Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Continuous Drain Current Id, P Channel:-130mA; Current Id Max:-130mA; Drain Source Voltage Vds, P Channel:-50V; Module Configuration:Dual; On Resistance Rds(on), P Channel:6ohm; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device; Transistor Type:Enhancement; Voltage Vds Typ:-50V; Voltage Vgs Rds on Measurement:-5V.

MOSFET, NP, CH, 60V, SOT-363; Transistor Polarity:N and P Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):13.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:200mW; Transistor Case Style:SOT-363; No.