Onsemi Fqu13N06Ltu

Rating :- 8.1 /10

Votes :- 54

IGBT, SINGLE, 360V, 46A, TO-263AB-3; DC Collector Current:46A; Collector Emitter Saturation Voltage Vce(on):1.17V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:360V; Transistor Case Style:TO-263AB; No.

Onsemi Isl9V5036S3St of Pins:3Pins; Operating Temperature Max:175Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

RECTIFIER, STANDARD, 2A, 400V, DO-214AA; Repetitive Reverse Voltage Vrrm Max:400V; Forward Current If(AV):2A; Diode Configuration:Single; Forward Voltage VF Max:1.15V; Reverse Recovery Time trr Max:2Âµs; Forward Surge Current Ifsm Max:50A; Operating Temperature Max:150Â°C; Diode Case Style:DO-214AA; No.

Onsemi S2G of Pins:2Pins; Product Range:S2G Series; Automotive Qualification Standard:-; SVHC:Lead (27-Jun-2018); Diode Type:Standard Recovery.

of Phases:Single Phase; Repetitive Reverse Voltage Vrrm Max:1kV; Forward Current If(AV):800mA; Bridge Rectifier Case Style:SOIC; Forward Voltage VF Max:1V; No.

Onsemi Mb10S.8A, 1KV, SOIC; No.

IGBT, SINGLE, 360V, 46A, TO-263AB-3; DC Collector Current:46A; Collector Emitter Saturation Voltage Vce(on):1.17V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:360V; Transistor Case Style:TO-263AB; No.

Onsemi Isl9V5036S3St of Pins:3Pins; Operating Temperature Max:175Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

MOSFET, N CH, 100V, 10A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.142ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:40W; Transistor Case Style:TO-252AA; No.

Onsemi Fqd13N10Ltm of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

MOSFET, N CH, 60V, 11A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.092ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:28W; Transistor Case Style:TO-252AA; No.

Onsemi Fqd13N06Ltm of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

IGBT, SINGLE, 400V, 21A, TO-220AB-3; DC Collector Current:21A; Collector Emitter Saturation Voltage Vce(on):1.25V; Power Dissipation Pd:150W; Collector Emitter Voltage V(br)ceo:400V; Transistor Case Style:TO-220AB; No.

Onsemi Isl9V3040P3 of Pins:3Pins; Operating Temperature Max:175Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:Lead (27-Jun-2018).

MOSFET, N CH, 60V, 11A, TO-251AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.092ohm; Available until stocks are exhausted Alternative available

Onsemi Fqu13N06Ltu.

IGBT, SINGLE, 400V, 21A, TO-220AB-3; DC Collector Current:21A; Collector Emitter Saturation Voltage Vce(on):1.25V; Power Dissipation Pd:150W; Collector Emitter Voltage V(br)ceo:400V; Transistor Case Style:TO-220AB; No.

Onsemi Isl9V3040P3 of Pins:3Pins; Operating Temperature Max:175Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:Lead (27-Jun-2018).

MOSFET, N CH, 60V, 11A, TO-251AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.092ohm; Available until stocks are exhausted Alternative available

Onsemi Fqu13N06Ltu.