MOSFET, N CHANNEL, 500V, 14.5A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:14.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.243ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:156W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:E Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited
Semiconductors - Discretes
Vishay Sihb15N50E-Ge3
Specifications of Vishay Sihb15N50E-Ge3 | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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